SI1539DL-T1 Vishay/Siliconix, SI1539DL-T1 Datasheet - Page 3

• Manufacturer Part Number: SI1539DL-T1
• Description: MOSFET 30 0.63/0.45
• Manufacturer: Vishay/Siliconix

Specifications of SI1539DL-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: +/- 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.63 A, 0.45 A
• Resistance Drain-source Rds (on): 0.48 Ohms, 0.94 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 8 ns at N Channel, 8 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 mW
• Rise Time: 8 ns at N Channel, 8 ns at P Channel
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 8 ns at N Channel, 5 ns at P Channel

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 71250
S12-0800-Rev. E, 16-Apr-12
1.0
0.8
0.6
0.4
0.2
0.0
1.6
1.2
0.8
0.4
0.0
10
8
6
4
2
0
0.0
0.0
0.0
V
I
D
DS
= 0.59 A
0.5
On-Resistance vs. Drain Current
= 15 V
0.2
0.2
V
DS
Q
Output Characteristics
g
V
- Drain-to-Source Voltage (V)
1.0
- Total Gate Charge (nC)
GS
I
D
- Drain Current (A)
Gate Charge
0.4
0.4
= 10 V thru 4 V
V
GS
1.5
= 4.5 V
For more information please contact:
0.6
0.6
2.0
V
GS
0.8
0.8
3 V
2.5
= 10 V
This document is subject to change without notice.
3.0
1.0
1.0
[e-mail]
1.0
0.8
0.6
0.4
0.2
0.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
60
50
40
30
20
10
- 50
0
0.0
0
On-Resistance vs. Junction Temperature
C
- 25
V
I
0.5
D
rss
GS
= 0.59 A
= 10 V
4
V
V
1.0
T
GS
Transfer Characteristics
DS
0
J
- Junction Temperature (°C)
C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
oss
1.5
25
Capacitance
8
T
2.0
50
C
C
25 °C
iss
= 125 °C
12
2.5
75
Vishay Siliconix
www.vishay.com/doc?91000
100
3.0
Si1539DL
- 55 °C
16
www.vishay.com
125
3.5
150
4.0
20
3