SI1539DL-T1 Vishay/Siliconix, SI1539DL-T1 Datasheet - Page 6

• Manufacturer Part Number: SI1539DL-T1
• Description: MOSFET 30 0.63/0.45
• Manufacturer: Vishay/Siliconix

Specifications of SI1539DL-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: +/- 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.63 A, 0.45 A
• Resistance Drain-source Rds (on): 0.48 Ohms, 0.94 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 8 ns at N Channel, 8 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 mW
• Rise Time: 8 ns at N Channel, 8 ns at P Channel
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 8 ns at N Channel, 5 ns at P Channel

Si1539DL
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
6
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
- 0.2
- 0.4
0.1
0.6
0.4
0.2
10
- 50
8
6
4
2
0
1
0
0.0
0.0
V
I
D
- 25
DS
Source-Drain Diode Forward Voltage
= 0.42 A
0.2
= 15 V
0.2
V
SD
Q
0
g
-
Threshold Voltage
0.4
- Total Gate Charge (nC)
S
T
T
o
J
J
u
25
Gate Charge
0.4
- Temperature (°C)
c r
= 150 °C
e
t -
- o
0.6
50
D
a r
I
For more information please contact:
n i
D
0.6
= 250 µA
V
75
l o
0.8
a t
g
e
100
T
(
J
) V
0.8
= 25 °C
1.0
This document is subject to change without notice.
125
1.0
1.2
150
[e-mail]
1.6
1.4
1.2
1.0
0.8
0.6
3.0
2.5
2.0
1.5
1.0
0.5
0.0
- 50
5
4
3
2
1
0
10
0
- 3
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
V
I
D
I
GS
D
= 0.42 A
10
= 0.42 A
= 10 V
- 2
2
V
T
GS
0
J
- Junction Temperature (°C)
Single Pulse Power
- Gate-to-Source Voltage (V)
10
25
- 1
4
Time (s)
50
1
6
75
S12-0800-Rev. E, 16-Apr-12
Document Number: 71250
10
www.vishay.com/doc?91000
100
8
100
125
150
10
600