MT48H8M32LFB5-75:H Micron Technology Inc, MT48H8M32LFB5-75:H Datasheet - Page 22
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MT48H8M32LFB5-75:H
Manufacturer Part Number
MT48H8M32LFB5-75:H
Description
IC SDRAM 256MBIT 133MHZ 90VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT48H8M32LFB5-75H.pdf
(77 pages)
Specifications of MT48H8M32LFB5-75:H
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
256M (8Mx32)
Speed
133MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT48H8M32LFB5-75:H
Manufacturer:
MICRON
Quantity:
2 000
Company:
Part Number:
MT48H8M32LFB5-75:H
Manufacturer:
MICRON
Quantity:
4 000
Company:
Part Number:
MT48H8M32LFB5-75:H
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
MT48H8M32LFB5-75:H TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Deep Power-Down
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
Auto precharge ensures that the precharge is initiated at the earliest valid stage within a
burst. The user must not issue another command to the same bank until the precharge
time (
issued at the earliest possible time, as described for each burst type in “Operations” on
page 23.
Deep power-down is an operating mode used to achieve maximum power reduction by
eliminating the power to the memory array. Data will not be retained once the device
enters deep power-down mode.
t
RP) is completed. This is determined as if an explicit PRECHARGE command was
22
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x16, x32 Mobile SDRAM
©2006 Micron Technology, Inc. All rights reserved.
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