MT48H8M32LFB5-75:H Micron Technology Inc, MT48H8M32LFB5-75:H Datasheet - Page 48
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MT48H8M32LFB5-75:H
Manufacturer Part Number
MT48H8M32LFB5-75:H
Description
IC SDRAM 256MBIT 133MHZ 90VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT48H8M32LFB5-75H.pdf
(77 pages)
Specifications of MT48H8M32LFB5-75:H
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
256M (8Mx32)
Speed
133MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT48H8M32LFB5-75:H
Manufacturer:
MICRON
Quantity:
2 000
Company:
Part Number:
MT48H8M32LFB5-75:H
Manufacturer:
MICRON
Quantity:
4 000
Company:
Part Number:
MT48H8M32LFB5-75:H
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
MT48H8M32LFB5-75:H TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Table 13:
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
Parameter/Condition
Operating current:
Active mode; BL = 1; READ or WRITE;
Standby current:
Power-down mode; All banks idle; CKE = LOW
Precharge nonpower-down standby current with clock stopped: All
banks idle; CKE is LOW, CS is HIGH; CK = LOW, CK# = HIGH; Address and
control inputs are switching; Data bus inputs are stable
Standby current:
Non-power-down mode; All banks idle; CKE = HIGH
Precharge nonpower-down standby current with clock stopped: All
banks idle; CKE is LOW, CS is HIGH; CK = LOW, CK# = HIGH; Address and
control inputs are switching; Data bus inputs are stable
Standby current:
Active mode; CKE = LOW; CS# = HIGH; All banks active; No accesses in
progress
Precharge nonpower-down standby current with clock stopped: All
banks idle; CKE is LOW, CS is HIGH; CK = LOW, CK# = HIGH; Address and
control inputs are switching; Data bus inputs are stable
Standby current:
Active mode; CKE = HIGH; CS# = HIGH; All banks active after
No accesses in progress
Precharge nonpower-down standby current with clock stopped: All
banks idle; CKE is LOW, CS is HIGH; CK = LOW, CK# = HIGH; Address and
control inputs are switching; Data bus inputs are stable
Operating current:
Burst mode; READ or WRITE; All banks active, half DQs toggling every
cycle
Auto refresh current:
CKE = HIGH; CS# = HIGH
Deep power-down
I
Notes: 1, 5, 6, 11, 13; notes appear on page 52 and 53; V
DD
Specifications and Conditions (x16)
t
RC =
t
RC (MIN)
t
t
RFC =
RFC = 7.8125µs
t
RFC (MIN)
48
t
RCD met;
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
/V
low-power
low-power
standard
standard
DDQ
Symbol
I
I
I
I
I
I
I
I
I
DD2NS
I
DD3NS
DD2PS
DD2PS
DD3PS
I
DD2N
DD3N
I
I
I
DD2P
DD2P
DD3P
DD1
DD4
DD5
DD6
I
256Mb: x16, x32 Mobile SDRAM
ZZ
= 1.7–1.95V
300
220
300
220
100
-75
65
20
25
10
90
10
Electrical Specifications
5
5
3
5
Max
©2006 Micron Technology, Inc. All rights reserved.
300
220
300
220
60
20
25
10
85
95
10
-8
5
5
3
5
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
Notes
18 19,
29, 30
1, 18,
1, 18,
1, 18,
1, 12,
1, 12,
1, 18,
1, 12,
19
19
19
30
30
19
19
19
26