BTA312X-600E/DGQ NXP Semiconductors, BTA312X-600E/DGQ Datasheet - Page 2

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BTA312X-600E/DGQ

Manufacturer Part Number
BTA312X-600E/DGQ
Description
Triacs
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BTA312X-600E/DGQ

Rohs
yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BTA312X-600E/DGQ
Manufacturer:
SUSUMU
Quantity:
12 000
NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BTA312X-600E
Product data sheet
Symbol
Pin
Type number
Symbol
1
2
3
mb
BTA312X-600E
V
I
I
T(RMS)
TSM
DRM
Symbol Description
T1
T2
G
n.c.
Pinning information
Ordering information
Limiting values
Parameter
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
main terminal 1
main terminal 2
gate
mounting base; isolated
Package
Name
TO-220F
Conditions
Description
All information provided in this document is subject to legal disclaimers.
V
T
V
T
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
j
j
D
D
= 25 °C;
= 25 °C;
= 12 V; I
= 12 V; I
Conditions
full sine wave; T
Fig. 3
full sine wave; T
t
full sine wave; T
t
p
p
Simplified outline
= 20 ms;
= 16.7 ms
Fig. 7
Fig. 7
T
T
5 October 2012
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
TO-220F (SOT186A)
Fig.
1
mb
4;
2
h
j(init)
j(init)
≤ 59 °C;
Fig. 5
3
= 25 °C;
= 25 °C;
Fig.
1;
Graphic symbol
Fig.
2;
Min
-
-
BTA312X-600E
T2
sym051
Typ
Min
-
-
-
-
-
-
© NXP B.V. 2012. All rights reserved
3Q Hi-Com Triac
T1
G
Max
Version
Max
10
10
SOT186A
600
12
100
110
Unit
Unit
mA
mA
V
A
A
A
2 / 12

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