BTA312X-600E/DGQ NXP Semiconductors, BTA312X-600E/DGQ Datasheet - Page 4

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BTA312X-600E/DGQ

Manufacturer Part Number
BTA312X-600E/DGQ
Description
Triacs
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BTA312X-600E/DGQ

Rohs
yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BTA312X-600E/DGQ
Manufacturer:
SUSUMU
Quantity:
12 000
NXP Semiconductors
5. Thermal characteristics
Table 5.
BTA312X-600E
Product data sheet
Fig. 4.
Fig. 5.
Symbol
R
th(j-h)
I
(A)
TSM
120
100
I
80
60
40
20
(A)
TSM
0
10
10
t
(1) dI
Non-repetitive peak on-state current as a function of pulse duration; maximum values
f = 50 Hz
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
10
p
1
3
2
10
≤ 20 ms
Thermal characteristics
-5
T
/dt limit
Parameter
thermal resistance
from junction to
heatsink
(1)
10
-4
Conditions
All information provided in this document is subject to legal disclaimers.
full cycle or half cycle; with heatsink
compound;
full cycle or half cycle; without heatsink
compound;
10
Fig. 6
Fig. 6
5 October 2012
10
-3
10
2
10
-2
number of cycles (n)
Min
-
-
I
T
BTA312X-600E
I
T
T
j(init)
T
j(init)
Typ
-
-
1/f
= 25 °C max
= 25 °C max
t
p
© NXP B.V. 2012. All rights reserved
t
3Q Hi-Com Triac
p
003aab809
(s)
003aab806
I
TSM
Max
4
5.5
I
TSM
t
t
10
10
3
-1
Unit
K/W
K/W
4 / 12

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