BTA312X-600E/DGQ NXP Semiconductors, BTA312X-600E/DGQ Datasheet - Page 6

• Manufacturer Part Number: BTA312X-600E/DGQ
• Description: Triacs
• Manufacturer: NXP Semiconductors

Specifications of BTA312X-600E/DGQ

• Rohs: yes

NXP Semiconductors
BTA312X-600E
Product data sheet
Symbol
I
I
V
V
I
Dynamic characteristics
dV
dI
L
H
D
T
GT
com
D
/dt
/dt
Parameter
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
rate of rise of off-state
voltage
rate of change of
commutating current
Conditions
All information provided in this document is subject to legal disclaimers.
V
T
V
T
V
T
V
T
V
T
V
I
V
Fig. 11
V
Fig. 11
V
V
of V
open circuit
V
dV
condition); gate open circuit
V
dV
V
dV
T
j
j
j
j
j
D
D
D
D
D
D
D
D
D
DM
D
D
D
= 15 A; T
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
com
com
com
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; T
= 12 V; I
= 400 V; I
= 600 V; T
= 400 V; T
= 400 V; T
= 400 V; T
DRM
= 402 V; T
/dt = 20 V/µs; (snubberless
/dt = 10 V/µs; gate open circuit
/dt = 1 V/µs; gate open circuit
); exponential waveform; gate
Fig. 7
Fig. 7
Fig. 8
Fig. 8
Fig. 8
j
T
T
G
G
G
T
5 October 2012
j
= 25 °C;
T
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
= 0.1 A; T
= 25 °C;
= 0.1 A; T2+ G+;
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
j
j
j
j
= 0.1 A; T
= 125 °C
= 125 °C; I
= 125 °C; I
= 125 °C; I
j
= 61 °C; (V
Fig. 10
Fig. 9
j
= 25 °C;
j
= 125 °C;
T(RMS)
T(RMS)
T(RMS)
DM
= 67%
= 12 A;
= 12 A;
= 12 A;
Min
-
-
-
-
-
-
-
-
0.25
-
50
3
6
10
BTA312X-600E
Typ
-
-
-
-
-
-
1.3
0.7
0.4
0.1
-
-
-
-
© NXP B.V. 2012. All rights reserved
3Q Hi-Com Triac
Max
10
10
25
30
25
15
1.6
1.5
-
0.5
-
-
-
-
Unit
mA
mA
mA
mA
mA
mA
V
V
V
mA
V/µs
A/ms
A/ms
A/ms
6 / 12