BTA312X-600E/DGQ NXP Semiconductors, BTA312X-600E/DGQ Datasheet - Page 3

• Manufacturer Part Number: BTA312X-600E/DGQ
• Description: Triacs
• Manufacturer: NXP Semiconductors

Specifications of BTA312X-600E/DGQ

• Rohs: yes

NXP Semiconductors
BTA312X-600E
Product data sheet
Symbol
Fig. 1.
Fig. 3.
I
dI
I
P
P
T
T
2
GM
stg
j
t
GM
G(AV)
T
/dt
I
T(RMS )
(W)
P
(A)
tot
15
10
16
12
8
4
0
5
0
RMS on-state current as a function of heatsink
temperature; maximum values
α = conduction angle
Total power dissipation as a function of RMS on-state current; maximum values
-50
0
conduction
(degrees)
Parameter
I
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
angle
2
120
180
t for fusing
30
60
90
0
factor
form
1.57
2.8
2.2
1.9
a
4
50
3
α
100
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T
h
(°C)
150
Conditions
t
I
p
T
over any 20 ms period
= 10 ms; SIN
= 20 A; I
5 October 2012
G
6
Fig. 2.
= 0.2 A; dI
I
T(RMS )
(A)
100
80
60
40
20
0
10
f = 50 Hz; T
RMS on-state current as a function of surge
duration; maximum values
-2
G
/dt = 0.2 A/µs
h
10
= 59 °C
-1
9
BTA312X-600E
α = 180°
I
T(RMS)
s urge duration (s )
1
Min
120°
-
-
-
-
-
-40
-
90°
60°
30°
(A)
© NXP B.V. 2012. All rights reserved
3Q Hi-Com Triac
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Max
50
100
2
5
0.5
150
125
10
12
Unit
A
A/µs
A
W
W
°C
°C
2
3 / 12
s