BF621 T/R NXP Semiconductors, BF621 T/R Datasheet - Page 10
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BF621 T/R
Manufacturer Part Number
BF621 T/R
Description
Transistors Bipolar - BJT TRANS HV TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.BF621_TR.pdf
(10 pages)
Specifications of BF621 T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
300 V
Collector- Emitter Voltage Vceo Max
300 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
60 MHz
Dc Collector/base Gain Hfe Min
50 at 25 mA at 20 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-89
Continuous Collector Current
0.05 A
Maximum Power Dissipation
1100 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
1000
Part # Aliases
BF621,115
Printed in The Netherlands
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
R75/04/pp10
Date of release: 2004 Dec 14
Document order number: 9397 750 13868