BF621 T/R NXP Semiconductors, BF621 T/R Datasheet - Page 3
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BF621 T/R
Manufacturer Part Number
BF621 T/R
Description
Transistors Bipolar - BJT TRANS HV TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.BF621_TR.pdf
(10 pages)
Specifications of BF621 T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
300 V
Collector- Emitter Voltage Vceo Max
300 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
60 MHz
Dc Collector/base Gain Hfe Min
50 at 25 mA at 20 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-89
Continuous Collector Current
0.05 A
Maximum Power Dissipation
1100 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
1000
Part # Aliases
BF621,115
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm
2004 Dec 14
V
V
V
I
I
I
P
T
T
T
SYMBOL
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
PNP high-voltage transistors
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
BF621
BF623
BF621
BF623
PARAMETER
open emitter
open base
open collector
T
amb
note 1
note 2
note 3
3
≤ 25 °C
CONDITIONS
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
BF621; BF623
Product data sheet
−300
−250
−300
−250
−5
−50
−100
−50
0.5
0.8
1.1
+150
150
+150
MAX.
V
V
V
V
V
mA
mA
mA
W
W
W
°C
°C
°C
UNIT
2
2
.
.