BF621 T/R NXP Semiconductors, BF621 T/R Datasheet - Page 6
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BF621 T/R
Manufacturer Part Number
BF621 T/R
Description
Transistors Bipolar - BJT TRANS HV TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.BF621_TR.pdf
(10 pages)
Specifications of BF621 T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
300 V
Collector- Emitter Voltage Vceo Max
300 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
60 MHz
Dc Collector/base Gain Hfe Min
50 at 25 mA at 20 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-89
Continuous Collector Current
0.05 A
Maximum Power Dissipation
1100 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
1000
Part # Aliases
BF621,115
NXP Semiconductors
2004 Dec 14
PNP high-voltage transistors
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm
(1) δ = 1.
(2) δ = 0.75.
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm
(1) δ = 1.
(2) δ = 0.75.
(K/W)
(K/W)
Z
Z
th
th
10
10
10
10
10
10
1
1
3
2
10
3
2
10
−5
−5
(10)
(10)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(1)
(3)
(5)
(6)
(7)
(8)
(9)
(2)
(4)
(3) δ = 0.5.
(4) δ = 0.33.
(3) δ = 0.5.
(4) δ = 0.33.
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
Fig.5 Transient thermal impedance as a function of pulse time; typical values.
10
10
−4
−4
10
10
−3
−3
(5) δ = 0.2.
(6) δ = 0.1.
(5) δ = 0.2.
(6) δ = 0.1.
10
10
−2
−2
(7) δ = 0.05.
(8) δ = 0.02.
(7) δ = 0.05.
(8) δ = 0.02.
2
2
.
.
10
10
6
−1
−1
(9) δ = 0.01.
(10) δ = 0.
(9) δ = 0.01.
(10) δ = 0.
1
1
10
10
BF621; BF623
10
10
2
2
Product data sheet
t
t
p
p
006aaa236
006aaa237
(s)
(s)
10
10
3
3