BF621 T/R NXP Semiconductors, BF621 T/R Datasheet - Page 6

• Manufacturer Part Number: BF621 T/R
• Description: Transistors Bipolar - BJT TRANS HV TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BF621 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 300 V
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 60 MHz
• Dc Collector/base Gain Hfe Min: 50 at 25 mA at 20 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Continuous Collector Current: 0.05 A
• Maximum Power Dissipation: 1100 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 1000
• Part # Aliases: BF621,115

NXP Semiconductors
2004 Dec 14
PNP high-voltage transistors
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm
(1) δ = 1.
(2) δ = 0.75.
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm
(1) δ = 1.
(2) δ = 0.75.
(K/W)
(K/W)
Z
Z
th
th
10
10
10
10
10
10
1
1
3
2
10
3
2
10
−5
−5
(10)
(10)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(1)
(3)
(5)
(6)
(7)
(8)
(9)
(2)
(4)
(3) δ = 0.5.
(4) δ = 0.33.
(3) δ = 0.5.
(4) δ = 0.33.
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
Fig.5 Transient thermal impedance as a function of pulse time; typical values.
10
10
−4
−4
10
10
−3
−3
(5) δ = 0.2.
(6) δ = 0.1.
(5) δ = 0.2.
(6) δ = 0.1.
10
10
−2
−2
(7) δ = 0.05.
(8) δ = 0.02.
(7) δ = 0.05.
(8) δ = 0.02.
2
2
.
.
10
10
6
−1
−1
(9) δ = 0.01.
(10) δ = 0.
(9) δ = 0.01.
(10) δ = 0.
1
1
10
10
BF621; BF623
10
10
2
2
Product data sheet
t
t
p
p
006aaa236
006aaa237
(s)
(s)
10
10
3
3