MT46H8M32LFB5-5 IT:H Micron Technology Inc, MT46H8M32LFB5-5 IT:H Datasheet - Page 37
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MT46H8M32LFB5-5 IT:H
Manufacturer Part Number
MT46H8M32LFB5-5 IT:H
Description
IC DDR SDRAM 256MBIT 90VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46H16M16LFBF-5H.pdf
(96 pages)
Specifications of MT46H8M32LFB5-5 IT:H
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (8Mx32)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
90-VFBGA
Organization
8Mx32
Density
256Mb
Address Bus
14b
Access Time (max)
6.5/5ns
Maximum Clock Rate
200MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
180mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 11: WRITE Command
PRECHARGE
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Note:
BA0, BA1
The PRECHARGE command is used to deactivate the open row in a particular bank or
the open row in all banks. The bank(s) will be available for a subsequent row access a
specified time (
whether one or all banks will be precharged, and in the case where only one bank is
precharged, inputs BA0 and BA1 select the bank. Otherwise, BA0 and BA1 are treated as
“Don’t Care.” After a bank has been precharged, it is in the idle state and must be activa-
ted prior to any READ or WRITE commands being issued to that bank.
Address
1. EN AP = enable auto precharge; DIS AP = disable auto precharge.
RAS#
CAS#
WE#
CK#
CKE
A10
CS#
CK
HIGH
t
RP) after the PRECHARGE command is issued. Input A10 determines
Column
DIS AP
EN AP
Bank
Don’t Care
37
256Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2008 Micron Technology, Inc. All rights reserved.
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