PBSS303NX T/R NXP Semiconductors, PBSS303NX T/R Datasheet - Page 11

• Manufacturer Part Number: PBSS303NX T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS303NX T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 5.1 A
• Gain Bandwidth Product Ft: 130 MHz
• Dc Collector/base Gain Hfe Min: 300 at 0.5 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: UPAK
• Dc Current Gain Hfe Max: 300 at 0.5 A at 2 V
• Maximum Power Dissipation: 2100 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 1000
• Part # Aliases: PBSS303NX,115

NXP Semiconductors
11. Soldering
PBSS303NX_2
Product data sheet
Fig 16. Reflow soldering footprint SOT89 (SC-62)
Fig 17. Wave soldering footprint SOT89 (SC-62)
4.60
0.85
Not recommended for wave soldering
1.20
1.20
1.00
0.20
(3x)
1.50
3
Rev. 02 — 20 November 2009
6.60
2.40
0.70
5.30
3
3.70
1.90
1.20
3.95
4.75
2.25
2.00
2
1
2
0.50
30 V, 5.1 A NPN low V
1.20
3.50
3.00
1
0.60 (3x)
0.70 (3x)
7.60
0.50
preferred transport direction during soldering
1.20
1.70
4.85
Dimensions in mm
msa442
PBSS303NX
CEsat
solder lands
solder resist
occupied area
Dimensions in mm
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
solder lands
solder resist
occupied area
solder paste
msa423
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