PBSS303NX T/R NXP Semiconductors, PBSS303NX T/R Datasheet - Page 8

• Manufacturer Part Number: PBSS303NX T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS303NX T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 5.1 A
• Gain Bandwidth Product Ft: 130 MHz
• Dc Collector/base Gain Hfe Min: 300 at 0.5 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: UPAK
• Dc Current Gain Hfe Max: 300 at 0.5 A at 2 V
• Maximum Power Dissipation: 2100 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 1000
• Part # Aliases: PBSS303NX,115

NXP Semiconductors
PBSS303NX_2
Product data sheet
Fig 9.
Fig 11. Collector-emitter saturation resistance as a
V
R
CEsat
CEsat
(V)
(Ω)
10
10
10
(1) T
(2) T
(3) T
10
10
(1) T
(2) T
(3) T
10
10
−1
−2
−3
−1
−2
1
2
1
10
10
I
Collector-emitter saturation voltage as a
function of collector current; typical values
I
function of collector current; typical values
−1
C
−1
C
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 20
= 20
= 100 °C
= 25 °C
= −55 °C
= 100 °C
= 25 °C
= −55 °C
1
1
10
10
10
10
2
2
(1)
(2)
(3)
10
10
006aaa582
3
006aaa585
3
I
I
C
C
(1)
(2)
(3)
(mA)
(mA)
Rev. 02 — 20 November 2009
10
10
4
4
Fig 10. Collector-emitter saturation voltage as a
Fig 12. Collector-emitter saturation resistance as a
R
V
CEsat
CEsat
(Ω)
(V)
10
10
10
(1) I
(2) I
(3) I
10
10
(1) I
(2) I
(3) I
10
10
10
−1
−2
−3
−1
−2
1
1
10
3
2
10
T
function of collector current; typical values
T
function of collector current; typical values
30 V, 5.1 A NPN low V
−1
C
C
C
−1
C
C
C
amb
amb
/I
/I
/I
/I
/I
/I
(1)
(2)
(3)
B
B
B
B
B
B
(1)
(3)
= 100
= 50
= 10
= 100
= 50
= 10
= 25 °C
= 25 °C
1
1
(2)
10
10
PBSS303NX
10
10
2
2
CEsat
© NXP B.V. 2009. All rights reserved.
10
10
(BISS) transistor
006aaa583
006aaa587
3
3
I
I
C
C
(mA)
(mA)
10
10
4
4
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