PBSS303NX T/R NXP Semiconductors, PBSS303NX T/R Datasheet - Page 12

• Manufacturer Part Number: PBSS303NX T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS303NX T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 5.1 A
• Gain Bandwidth Product Ft: 130 MHz
• Dc Collector/base Gain Hfe Min: 300 at 0.5 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: UPAK
• Dc Current Gain Hfe Max: 300 at 0.5 A at 2 V
• Maximum Power Dissipation: 2100 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 1000
• Part # Aliases: PBSS303NX,115

NXP Semiconductors
12. Mounting
PBSS303NX_2
Product data sheet
Fig 18. FR4 PCB, standard footprint;
mm
40
3.96 mm
PCB thickness:
FR4 PCB = 1.6 mm
ceramic PCB = 0.635 mm
ceramic PCB, Al
footprint SOT89 (SC-62)
0.5 mm
2.5 mm
2.5 mm
1 mm
32 mm
Rev. 02 — 20 November 2009
2
3 mm
1 mm
001aaa234
O
1.6 mm
3
, standard
5 mm
30 V, 5.1 A NPN low V
Fig 19. FR4 PCB, mounting pad for
mm
40
3.96 mm
PCB thickness = 1.6 mm
collector 6 cm
0.5 mm
2.5 mm
32 mm
30 mm
PBSS303NX
CEsat
2
SOT89 (SC-62)
001aaa235
1 mm
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
1.6 mm
mm
20
5 mm
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