PBSS2515VS T/R NXP Semiconductors, PBSS2515VS T/R Datasheet - Page 3

• Manufacturer Part Number: PBSS2515VS T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS2515VS T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 15 V
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 420 MHz
• Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SS-Mini
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: PBSS2515VS,115

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
2004 Dec 23
Per transistor unless otherwise specified
V
V
V
I
I
I
P
T
T
T
Per device
P
R
SYMBOL
SYMBOL
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
tot
15 V low V
th(j-a)
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
total power dissipation
thermal resistance from junction to ambient
CE(sat)
PARAMETER
NPN double transistor
PARAMETER
open emitter
open base
open collector
T
T
amb
amb
≤ 25 °C; note 1
≤ 25 °C; note 1
3
notes 1 and 2
CONDITIONS
CONDITIONS
−
−
−
−
−
−
−
−65
−
−65
−
MIN.
VALUE
416
PBSS2515VS
15
15
6
500
1
100
200
+150
150
+150
300
MAX.
Product data sheet
UNIT
K/W
V
V
V
mA
A
mA
mW
°C
°C
°C
mW
UNIT