PBSS2515VS T/R NXP Semiconductors, PBSS2515VS T/R Datasheet - Page 9

• Manufacturer Part Number: PBSS2515VS T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS2515VS T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 15 V
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 420 MHz
• Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SS-Mini
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: PBSS2515VS,115

Printed in The Netherlands
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [e-mail]
R75/03/pp9
Date of release: 2004 Dec 23
Document order number: 9397 750 14426