PBSS2515VS T/R NXP Semiconductors, PBSS2515VS T/R Datasheet - Page 7

• Manufacturer Part Number: PBSS2515VS T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS2515VS T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 15 V
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 420 MHz
• Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SS-Mini
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: PBSS2515VS,115

NXP Semiconductors
PACKAGE OUTLINE
2004 Dec 23
15 V low V
Plastic surface-mounted package; 6 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT666
0.6
0.5
A
S
0.27
0.17
CE(sat)
b
p
pin 1 index
0.18
0.08
c
IEC
Y S
NPN double transistor
6
1
e 1
1.7
1.5
D
D
e
1.3
1.1
b p
E
5
2
JEDEC
0
1.0
e
REFERENCES
3
4
0.5
e
1
w
A
M
A
1.7
1.5
H
E
JEITA
scale
1
7
0.3
0.1
L
p
0.1
w
A
0.1
y
2 mm
H E
E
detail X
PROJECTION
EUROPEAN
L p
PBSS2515VS
c
X
Product data sheet
ISSUE DATE
04-11-08
06-03-16
SOT666