MX0912B251Y TRAY NXP Semiconductors, MX0912B251Y TRAY Datasheet - Page 5

• Manufacturer Part Number: MX0912B251Y TRAY
• Description: Transistors Bipolar - BJT BULKTR TNS-MICL
• Manufacturer: NXP Semiconductors

Specifications of MX0912B251Y TRAY

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 65 V
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 15 A
• Gain Bandwidth Product Ft: 1.215 GHz
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-439A
• Maximum Power Dissipation: 690000 mW
• Factory Pack Quantity: 4
• Part # Aliases: MX0912B251Y,114

Philips Semiconductors
1997 Feb 19
handbook, halfpage
NPN microwave power transistor
V
Fig.3
CC
(W)
P L
300
250
200
= 50 V; t
0.95
Load power as a function of frequency.
(In broadband test circuit as shown in Fig.6)
p
= 10 s;
1.05
= 10%.
1.15
f (GHz)
MGL042
1.25
5
handbook, halfpage
V
Fig.4
CC
(%)
C
= 50 V; t
50
45
40
0.95
Collector efficiency as a function of
frequency. (In broadband test circuit as
shown in Fig.6)
p
= 10 s;
1.05
= 10%.
MX0912B251Y
1.15
Product specification
f (GHz)
MGL043
1.25