MX0912B251Y TRAY NXP Semiconductors, MX0912B251Y TRAY Datasheet - Page 7

• Manufacturer Part Number: MX0912B251Y TRAY
• Description: Transistors Bipolar - BJT BULKTR TNS-MICL
• Manufacturer: NXP Semiconductors

Specifications of MX0912B251Y TRAY

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 65 V
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 15 A
• Gain Bandwidth Product Ft: 1.215 GHz
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-439A
• Maximum Power Dissipation: 690000 mW
• Factory Pack Quantity: 4
• Part # Aliases: MX0912B251Y,114

Philips Semiconductors
1997 Feb 19
handbook, full pagewidth
NPN microwave power transistor
Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity:
r
= 10.
40
V CC
0.635
6
2
6
3
2.5
30
8
L1
L2
3
9
Fig.6 Broadband test circuit.
C3
3
3
C5
4.5
22
5
7
5
5
5
22
C6
5
11
3
30
L3
0.635
12
C4
V CC
MGK068
C1
1 2 1
3
MX0912B251Y
40
Product specification