MX0912B251Y TRAY NXP Semiconductors, MX0912B251Y TRAY Datasheet - Page 6

• Manufacturer Part Number: MX0912B251Y TRAY
• Description: Transistors Bipolar - BJT BULKTR TNS-MICL
• Manufacturer: NXP Semiconductors

Specifications of MX0912B251Y TRAY

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 65 V
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 15 A
• Gain Bandwidth Product Ft: 1.215 GHz
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-439A
• Maximum Power Dissipation: 690000 mW
• Factory Pack Quantity: 4
• Part # Aliases: MX0912B251Y,114

Philips Semiconductors
List of components
1997 Feb 19
handbook, full pagewidth
COMPONENT
L1, L2
L3
C1
C2
C3
C4
C5, C6
NPN microwave power transistor
0.65 mm diameter copper wire
4 turns 0.65 mm diameter
copper wire
DC block
tantalum capacitor
electrolytic capacitor
feedthrough bypass capacitor
variable gigatrim capacitor
DESCRIPTION
1 s
1 s
300 s
3 ms
Fig.5 Pulse definition.
100 pF
10 F; 50 V
470 F; 63 V
0.8 to 8 pF
VALUE
6
total length = 12 mm;
height of loop = 9 mm
int. diameter 3 mm;
L = 5 mm
DIMENSIONS
MGK066
ATC, ref. 100A101KP50X
Erie, ref. 1250-003
Tekelec, ref. 729.1
MX0912B251Y
CATALOGUE NO.
Product specification