PBSS306NZ /T3 NXP Semiconductors, PBSS306NZ /T3 Datasheet
PBSS306NZ /T3
Specifications of PBSS306NZ /T3
Related parts for PBSS306NZ /T3
PBSS306NZ /T3 Summary of contents
Page 1
... Features Low collector-emitter saturation voltage V High collector current capability I High collector current gain (h High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications 1 ...
Page 2
... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS306NZ 4. Marking Table 4. Type number PBSS306NZ PBSS306NZ_2 Product data sheet Pinning Description base collector emitter collector Ordering information Package Name Description SC-73 plastic surface-mounted package with increased heatsink; 4 leads Marking codes Rev. 02 — ...
Page 3
... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm ...
Page 4
... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm [3] Device mounted on a ceramic PCB th(j-a) (K/W) δ 0. 0.50 0.33 0.20 0.10 0.05 10 ...
Page 5
... NXP Semiconductors 2 10 δ 0.75 Z th(j-a) 0.50 (K/W) 0.33 0.20 10 0.10 0.05 0.02 0. −1 10 −5 − FR4 PCB, mounting pad for collector 6 cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2 10 δ 0.75 Z th(j-a) (K/W) 0.50 0.33 0.20 10 0.10 0.05 0.02 1 0.01 0 −1 10 −5 − Ceramic PCB standard footprint ...
Page 6
... NXP Semiconductors 7. Characteristics Table amb Symbol I CBO I EBO CEsat R CEsat V BEsat V BEon off [1] Pulse test: t PBSS306NZ_2 Product data sheet Characteristics ° C unless otherwise specified. Parameter Conditions collector-base cut-off current 150 ° ...
Page 7
... NXP Semiconductors 600 h FE (1) 400 (2) (3) 200 0 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 5. DC current gain as a function of collector current; typical values 1 (V) 0.8 (1) (2) 0.4 (3) 0 − −55 °C ...
Page 8
... NXP Semiconductors 1 V CEsat (V) −1 10 −2 10 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values CEsat (Ω −1 10 −2 10 − ...
Page 9
... NXP Semiconductors 8. Test information Fig 13. BISS transistor switching time definition Fig 14. Test circuit for switching times PBSS306NZ_2 Product data sheet (probe) oscilloscope 450 Ω 12 0. Bon Rev. 02 — 11 December 2009 PBSS306NZ 100 V, 5 ...
Page 10
... NXP Semiconductors 9. Package outline Fig 15. Package outline SOT223 (SC-73) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBSS306NZ [1] For further information and the availability of packing methods, see PBSS306NZ_2 Product data sheet 6.7 6.3 3.1 2.9 7.3 3.7 6.7 3.3 1 2.3 4.6 Dimensions in mm ...
Page 11
... NXP Semiconductors 11. Soldering 1.3 (4×) (4×) Fig 16. Reflow soldering footprint 1.9 Fig 17. Wave soldering footprint PBSS306NZ_2 Product data sheet 7 3.85 3.6 3.5 0.3 1 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 8.9 6 2.7 2.7 1.9 1.1 (2×) Rev. 02 — 11 December 2009 PBSS306NZ 100 V, 5.1 A NPN low V CEsat 6.1 3.9 7.65 6.2 8.7 3 1.9 (3×) (BISS) transistor solder lands ...
Page 12
... Revision history Document ID Release date PBSS306NZ_2 20091211 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 16 “Reflow soldering • Figure 17 “Wave soldering ...
Page 13
... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
Page 14
... NXP Semiconductors 15. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 13 Legal information ...