PBSS306NZ /T3 NXP Semiconductors, PBSS306NZ /T3 Datasheet - Page 12

• Manufacturer Part Number: PBSS306NZ /T3
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS306NZ /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 100 V
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 5.1 A
• Gain Bandwidth Product Ft: 110 MHz
• Dc Collector/base Gain Hfe Min: 200 at 0.5 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-73
• Dc Current Gain Hfe Max: 200 at 0.5 A at 2 V
• Maximum Power Dissipation: 2000 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: PBSS306NZ,135

NXP Semiconductors
12. Revision history
Table 9.
PBSS306NZ_2
Product data sheet
Document ID
PBSS306NZ_2
Modifications:
PBSS306NZ_1
Revision history
Release date
20091211
20060920
•
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 16 “Reflow soldering
Figure 17 “Wave soldering
Rev. 02 — 11 December 2009
Data sheet status
Product data sheet
Product data sheet
footprint”: updated
footprint”: updated
100 V, 5.1 A NPN low V
Change notice
-
-
PBSS306NZ
Supersedes
PBSS306NZ_1
-
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
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