PBSS306NZ /T3 NXP Semiconductors, PBSS306NZ /T3 Datasheet - Page 10

• Manufacturer Part Number: PBSS306NZ /T3
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS306NZ /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 100 V
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 5.1 A
• Gain Bandwidth Product Ft: 110 MHz
• Dc Collector/base Gain Hfe Min: 200 at 0.5 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-73
• Dc Current Gain Hfe Max: 200 at 0.5 A at 2 V
• Maximum Power Dissipation: 2000 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: PBSS306NZ,135

NXP Semiconductors
9. Package outline
10. Packing information
PBSS306NZ_2
Product data sheet
Table 8.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
PBSS306NZ
Fig 15. Package outline SOT223 (SC-73)
For further information and the availability of packing methods, see
Packing methods
Package
SOT223
Rev. 02 — 11 December 2009
Dimensions in mm
7.3
6.7
3.7
3.3
Description
8 mm pitch, 12 mm tape and reel
1
2.3
6.7
6.3
3.1
2.9
4.6
100 V, 5.1 A NPN low V
2
4
3
0.8
0.6
1.1
0.7
Section
1.8
1.5
0.32
0.22
[1]
PBSS306NZ
04-11-10
Packing quantity
1000
-115
14.
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
4000
-135
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