PBSS4230T T/R NXP Semiconductors, PBSS4230T T/R Datasheet - Page 2

• Manufacturer Part Number: PBSS4230T T/R
• Description: Transistors Bipolar - BJT NPN 30V 2A
• Manufacturer: NXP Semiconductors

Specifications of PBSS4230T T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 230 MHz
• Dc Collector/base Gain Hfe Min: 350 at 100 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 2 A
• Maximum Power Dissipation: 480 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS4230T,215

NXP Semiconductors
FEATURES
• Low collector-emitter saturation voltage V
• High collector current capability I
• High efficiency leading to less heat generation
• Reduced printed-circuit board requirements
• Cost effective alternative to MOSFETs in specific
APPLICATIONS
• Power management
• Peripheral driver
DESCRIPTION
NPN BISS transistor in a SOT23 plastic package providing
ultra low V
PNP complement: PBSS5230T.
MARKING
Note
1. * = p: made in Hong Kong.
ORDERING INFORMATION
2003 Sep 29
PBSS4230T
PBSS4230T
applications.
– DC/DC conversion
– Supply line switching
– Battery charger
– LCD backlighting.
– Driver in low supply voltage applications (e.g. lamps
– Inductive load drivers (e.g. relays, buzzers and
30 V, 2 A
NPN low V
* = t: made in Malaysia.
* = W: made in China.
and LEDs)
motors).
TYPE NUMBER
TYPE NUMBER
CEsat
and R
CEsat
CEsat
parameters.
(BISS) transistor
−
MARKING CODE
NAME
C
and I
*3D
CM
CEsat
plastic surface mounted package; 3 leads
(1)
2
QUICK REFERENCE DATA
PINNING
handbook, halfpage
V
I
I
R
SYMBOL
C
CM
CEO
CEsat
PIN
DESCRIPTION
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
PACKAGE
Top view
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
base
emitter
collector
1
PARAMETER
3
DESCRIPTION
2
MAM255
PBSS4230T
Product data sheet
1
30
2
3
200
MAX.
VERSION
SOT23
3
2
V
A
A
mΩ
UNIT