PBSS4230T T/R NXP Semiconductors, PBSS4230T T/R Datasheet - Page 5

• Manufacturer Part Number: PBSS4230T T/R
• Description: Transistors Bipolar - BJT NPN 30V 2A
• Manufacturer: NXP Semiconductors

Specifications of PBSS4230T T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 230 MHz
• Dc Collector/base Gain Hfe Min: 350 at 100 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 2 A
• Maximum Power Dissipation: 480 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS4230T,215

NXP Semiconductors
PACKAGE OUTLINE
2003 Sep 29
Plastic surface mounted package; 3 leads
30 V, 2 A
NPN low V
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT23
1.1
0.9
A
max.
A
0.1
1
1
CEsat
0.48
0.38
b
p
IEC
(BISS) transistor
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
1
scale
B
EIAJ
1
5
2.5
2.1
H
E
0.45
0.15
L
A
p
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
PBSS4230T
c
Product data sheet
X
v
ISSUE DATE
M
97-02-28
99-09-13
A
SOT23