PBSS4230T T/R NXP Semiconductors, PBSS4230T T/R Datasheet - Page 7

• Manufacturer Part Number: PBSS4230T T/R
• Description: Transistors Bipolar - BJT NPN 30V 2A
• Manufacturer: NXP Semiconductors

Specifications of PBSS4230T T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 230 MHz
• Dc Collector/base Gain Hfe Min: 350 at 100 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 2 A
• Maximum Power Dissipation: 480 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS4230T,215

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NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
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R75/01/pp7
Date of release: 2003 Sep 29
Document order number: 9397 750 11898