PMBT2369 /T3 NXP Semiconductors, PMBT2369 /T3 Datasheet - Page 3

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PMBT2369 /T3

Manufacturer Part Number
PMBT2369 /T3
Description
Transistors Bipolar - BJT TRANS GP TAPE-11
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMBT2369 /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
40 V
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
500 MHz
Dc Collector/base Gain Hfe Min
40 at 10 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Collector Current
0.2 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
PMBT2369,235
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Jan 22
R
I
I
h
V
V
C
f
Switching times (between 10% and 90% levels); (see Fig.2)
t
t
t
t
t
t
j
CBO
EBO
T
on
d
r
off
s
f
SYMBOL
SYMBOL
FE
= 25 °C unless otherwise specified.
CEsat
BEsat
NPN switching transistor
th(j-a)
c
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
turn-on time
delay time
rise time
turn-off time
storage time
fall time
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
I
E
E
C
C
C
C
C
C
E
C
Con
Boff
= 0; V
= 0; V
= I
= 0; V
= 10 mA; V
= 10 mA; V
= 100 mA; V
= 10 mA; I
= 10 mA; I
= 10 mA; V
= −1.5 mA
= 10 mA; I
e
= 0; V
3
CB
CB
EB
= 20 V
= 20 V; T
= 4 V
CONDITIONS
CB
B
B
CE
CE
CE
= 1 mA
= 1 mA
Bon
CE
note 1
= 5 V; f = 1 MHz
= 1 V
= 1 V; T
= 10 V; f = 100 MHz
= 2 V
= 3 mA;
CONDITIONS
j
= 125 °C
amb
= −55 °C
40
20
20
700
500
MIN.
VALUE
500
PMBT2369
Product data sheet
400
30
100
120
250
850
4
10
4
6
20
10
10
MAX.
UNIT
K/W
nA
µA
nA
mV
mV
pF
MHz
ns
ns
ns
ns
ns
ns
UNIT

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