PMBT2369 /T3 NXP Semiconductors, PMBT2369 /T3 Datasheet - Page 4

• Manufacturer Part Number: PMBT2369 /T3
• Description: Transistors Bipolar - BJT TRANS GP TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of PMBT2369 /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 500 MHz
• Dc Collector/base Gain Hfe Min: 40 at 10 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 0.2 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: PMBT2369,235

NXP Semiconductors
2004 Jan 22
handbook, full pagewidth
NPN switching transistor
V
R1 = 56 Ω; R2 = 1 kΩ; R
V
Oscilloscope input impedance Z
i
BB
= 0.5 to 4.2 V; T = 500 µs; t
= 0.2 V; V
CC
= 2.7 V.
B
= 1 kΩ; R
p
= 10 µs; t
i
= 50 Ω.
C
= 270 Ω.
oscilloscope
r
= t
f
≤ 3 ns.
V i
Fig.2 Test circuit for switching times.
(probe)
450 Ω
R1
R2
R B
V BB
4
R C
V CC
DUT
V o
MLB826
(probe)
450 Ω
oscilloscope
PMBT2369
Product data sheet