IS42S32800B-7T ISSI, Integrated Silicon Solution Inc, IS42S32800B-7T Datasheet - Page 20
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IS42S32800B-7T
Manufacturer Part Number
IS42S32800B-7T
Description
IC SDRAM 256MBIT 143MHZ 86TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheet
1.IS42S32800B-7BL.pdf
(62 pages)
Specifications of IS42S32800B-7T
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (8Mx32)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
86-TSOPII
Organization
8Mx32
Density
256Mb
Address Bus
14b
Access Time (max)
5.5ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
150mA
Pin Count
86
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS42S32800B-7TL
Manufacturer:
ISSI
Quantity:
1 000
Part Number:
IS42S32800B-7TL
Manufacturer:
ISSI
Quantity:
20 000
Company:
Part Number:
IS42S32800B-7TLI
Manufacturer:
ISSI
Quantity:
1 000
IS42S32800B
20
DC RECOMMENDED OPERATING CONDITIONS
Notes:
1. All voltages are referenced to V
2. V
3. V
I
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE CHARACTERISTICS
(At T
Notes:
1. Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant
Symbol
V
V
V
V
I
P
T
T
to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute
Maximum Rating conditions for extended periods may affect device reliability.
IH
IL
O
Symbol
Symbol
DD
DDQ
I
OPT
STG
O
D
(undershoot): V
A
(overshoot): V
V
C
V
C
V
C
V
= 0 ~ 70°C, V
DDQ
CLK
DD
I
IH
IL
IN
/
O
IH
IL
(max) = V
Parameter
Supply Voltage
Supply Voltage for DQ
High Level Input Voltage (all Inputs)
Low Level Input Voltage (all Inputs)
Parameter
Input Capacitance, address & control pin
I
Data Input/Output Capacitance
(min) = - 2V (pulse width 3ns)
nput Capacitance, CLK pin
Supply Voltage (with respect to V
Supply Voltage for Output (with respect to V
Input Voltage
Output Voltage
Short circuit output current
Power Dissipation (
Operating Temperature
Storage Temperature
Parameters
DD
= V
DD
SS
DDQ
=0V
+ 2V (pulse width 3ns)
= 3.3 ± 0.3V, V
(with respect to V
(with respect to V
T
A
= 25 °C)
(1)
SS
= V
SS
SS
SSQ
)
Com.
Ind.
SSQ
)
)
= 0V , unless otherwise noted)
Min.
-0.3
3.0
2.0
3.0
SSQ
)
–1.0 to V
–0.5 to V
Typ.
Min.
-40 to +85
3.3
3.3
3.0
–65 to +150
1.5
1.5
–0.5 to +4.6
–0.5 to +4.6
—
—
0 to +70
Rating
50
1
DDQ
DD
+0.5
V
+0.5
DD
Max.
Max.
3.6
3.6
3.0
3.0
5.5
+0.8
Integrated Silicon Solution, Inc.
+ 0.3
Unit
mA
°C
°C
W
V
V
V
V
Unit
Unit
pF
pF
pF
V
V
V
V
I
07/21/09
Rev. F
®