IS42S32800B-7T ISSI, Integrated Silicon Solution Inc, IS42S32800B-7T Datasheet - Page 24
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IS42S32800B-7T
Manufacturer Part Number
IS42S32800B-7T
Description
IC SDRAM 256MBIT 143MHZ 86TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheet
1.IS42S32800B-7BL.pdf
(62 pages)
Specifications of IS42S32800B-7T
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (8Mx32)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
86-TSOPII
Organization
8Mx32
Density
256Mb
Address Bus
14b
Access Time (max)
5.5ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
150mA
Pin Count
86
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS42S32800B-7TL
Manufacturer:
ISSI
Quantity:
1 000
Part Number:
IS42S32800B-7TL
Manufacturer:
ISSI
Quantity:
20 000
Company:
Part Number:
IS42S32800B-7TLI
Manufacturer:
ISSI
Quantity:
1 000
IS42S32800B
24
I
Timing Waveforms
Figure 1.AC Parameters for Write Timing (Burst Length=4,CAS#Latency=2)
ADDR.
BS0,1
RAS#
CAS#
DQM
CKE
CS#
WE#
CLK
DQ
Hi-Z
t
CH
T0
t
t
IS
IS
T1
t
CL
Command
Activate
Bank A
RBx
T2
t
t
IS
IH
t
RCD
t
t
CK2
Auto Precharge
IH
T3 T4 T5 T6 T7
Write with
Command
Bank A
CAx
Ax0 Ax1 Ax2
t
RC
Command
Activate
Bank B
RBx
Begin Auto Precharge
-5 ,
Ax3 Bx0
Auto Precharge
Write with
Command
Bank A
Bank B
CBx
t
DAL
T8
Bx1
, -7 ,
T9
Command
Activate
Bank A
RAy
Bx2
T10
Begin Auto Precharge
t
IS
Bx3
T11
Command
Bank B
Bank A
Write
Ay0 Ay1 Ay2 Ay3
CAy
T12
x
t
T13
IH
T14
T15 T16 T17 T18 T19
t
Precharge
Command
WR
Bank A
Integrated Silicon Solution, Inc.
x
t
RP
Command
Activate
Bank A
RAz
t
RRD
t
IS
Command
Activate
Bank B
RBy
T20
I
T21
T22
07/21/09
Rev. F
®