IS42S32800B-7T ISSI, Integrated Silicon Solution Inc, IS42S32800B-7T Datasheet - Page 50
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IS42S32800B-7T
Manufacturer Part Number
IS42S32800B-7T
Description
IC SDRAM 256MBIT 143MHZ 86TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheet
1.IS42S32800B-7BL.pdf
(62 pages)
Specifications of IS42S32800B-7T
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (8Mx32)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
86-TSOPII
Organization
8Mx32
Density
256Mb
Address Bus
14b
Access Time (max)
5.5ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
150mA
Pin Count
86
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS42S32800B-7TL
Manufacturer:
ISSI
Quantity:
1 000
Part Number:
IS42S32800B-7TL
Manufacturer:
ISSI
Quantity:
20 000
Company:
Part Number:
IS42S32800B-7TLI
Manufacturer:
ISSI
Quantity:
1 000
IS42S32800B
50
Figure 17.3.Auto Precharge after Write Burst (Burst Length=4,CAS#Latency=3)
BS0,1
CAS#
A0-A9
DQM
RAS#
WE#
CKE
CLK
CS#
DQ
A9
High
Hi-Z
Command
Activate
Bank A
RAx
RAx
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
t
CK3
Command
Bank A
DAx0 DAx1 DAx2 DAx3
Write
CAx
Command
Activate
Bank B
RBx
RBx
Auto Precharge
Write with
Command
Bank B
DBx0 DBx1 DBx2 DBx3
CBx
Auto Precharge
Write with
Command
Bank A
CAy
DAy0
DAy1 DAy2
DAy3
Command
Activate
Bank B
RBy
RBy
‘
Integrated Silicon Solution, Inc.
Auto Precharge
Write with
Command
Bank B
DBy0 DBy1 DBy2 DBy3
CBy
07/21/09
Rev. F