IS42S32800B-7T ISSI, Integrated Silicon Solution Inc, IS42S32800B-7T Datasheet - Page 39
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IS42S32800B-7T
Manufacturer Part Number
IS42S32800B-7T
Description
IC SDRAM 256MBIT 143MHZ 86TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheet
1.IS42S32800B-7BL.pdf
(62 pages)
Specifications of IS42S32800B-7T
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (8Mx32)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
86-TSOPII
Organization
8Mx32
Density
256Mb
Address Bus
14b
Access Time (max)
5.5ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
150mA
Pin Count
86
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS42S32800B-7TL
Manufacturer:
ISSI
Quantity:
1 000
Part Number:
IS42S32800B-7TL
Manufacturer:
ISSI
Quantity:
20 000
Company:
Part Number:
IS42S32800B-7TLI
Manufacturer:
ISSI
Quantity:
1 000
IS42S32800B
Integrated Silicon Solution, Inc.
Rev. F
07/21/09
Figure 12.2.Random Row Write (Interleaving Banks)
(Burst Length=8,CAS#Latency=2)
BS0,1
CAS#
A0-A9
DQM
RAS#
WE#
CKE
CLK
CS#
A10
DQ
* t
High
Hi-Z
WR
Command
Activate
Bank A
RAx
RAx
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
> t
t
RCD
WR
t
CK2
Command
Bank A
Write
DAx0 DAx1 DAx2 DAx3 DAx4 DAx5 DAx6 DAx7 DBx0 DBx1
CAx
(min.)
Command
Activate
Bank B
RBx
RBx
Command
Bank B
t
WR*
Write
CBx
Precharge
Command
Bank A
t
DBx2 DBx3 DBx4 DBx5 DBx6
RP
Command
Activate
Bank A
RAy
RAy
DBx7
Command
Bank A
t
Write
WR*
DAy0 DAy1 DAy2
CAy
Precharge
Command
Bank B
DAy3
DAy4
39