IS42S32800B-6TL ISSI, Integrated Silicon Solution Inc, IS42S32800B-6TL Datasheet - Page 46
![no-image](/images/manufacturer_photos/0/3/347/issi__integrated_silicon_solution_inc_sml.jpg)
IS42S32800B-6TL
Manufacturer Part Number
IS42S32800B-6TL
Description
IC SDRAM 256MBIT 166MHZ 86TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheet
1.IS42S32800B-7BL.pdf
(62 pages)
Specifications of IS42S32800B-6TL
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (8Mx32)
Speed
166MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
86-TSOPII
Organization
8Mx32
Density
256Mb
Address Bus
14b
Access Time (max)
5.5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
180mA
Pin Count
86
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS42S32800B-6TL
Manufacturer:
ISSI
Quantity:
3
Company:
Part Number:
IS42S32800B-6TLI
Manufacturer:
ISSI
Quantity:
4
IS42S32800B
46
Figure 15.3.Interleaved Column Write Cycle (Burst Length=4,CAS#Latency=3)
BS0,1
A 0-A9
RAS#
CAS#
DQM
CKE
CS#
WE#
CLK
A10
DQ
Hi-Z
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Command
Activate
Bank A
RAx
RAx
t
CK3
t
RRD
t
RCD
> t
RRD(min)
Command
Bank A
Write
DAx0 DAx1 DAx2 DAx3
CAx RBw
Command
Activate
Bank B
RBw
Command
Bank B
DBw0 DBw1 DBx0 DBx1
CBw
Write
Command
Bank B
Write
CBx
Command
Bank B
Write
DBy0
CBy
DBy1 DAy0
Command
Bank A
Write
CAy
DAy1
Command
Bank B
t
DBz0 DBz1 DBz2 DBz3
Write
CBz
WR
Precharge
Integrated Silicon Solution, Inc.
Command
Bank A
t
RP
t
WR(min)
Precharge
Command
Bank B
07/21/09
Rev. F