IS42S32800D-6BL ISSI, Integrated Silicon Solution Inc, IS42S32800D-6BL Datasheet - Page 7

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IS42S32800D-6BL

Manufacturer Part Number
IS42S32800D-6BL
Description
IC SDRAM 256MBIT 166MHZ 90BGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheets

Specifications of IS42S32800D-6BL

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (8Mx32)
Speed
166MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-BGA
Organization
8Mx32
Density
256Mb
Address Bus
13b
Access Time (max)
6.5/5.4ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
180mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS42S32800D-6BL
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Company:
Part Number:
IS42S32800D-6BL
Quantity:
200
Company:
Part Number:
IS42S32800D-6BL
Quantity:
200
Part Number:
IS42S32800D-6BL-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS42S32800D-6BLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS42S32800D-6BLI
Manufacturer:
ISSI
Quantity:
20 000
Company:
Part Number:
IS42S32800D-6BLI
Quantity:
442
Part Number:
IS42S32800D-6BLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
DQM TRUTH TABLE
IS42S32800D, IS45S32800D
COMMAND TRUTH TABLE
Note: H=V
Note: H=V
Integrated Silicon Solution, Inc. - www.issi.com
Rev. C
12/01/09
Function
Data write / output enable
Data mask / output disable
Upper byte write enable / output enable
Lower byte write enable / output enable
Upper byte write inhibit / output disable
Lower byte write inhibit / output disable
Function
Device deselect (DESL)
No operation (NOP)
Burst stop (BST)
Read
Read with auto precharge
Write
Write with auto precharge
Bank activate (ACT)
Precharge select bank (PRE) H
Precharge all banks (PALL)
CBR Auto-Refresh (REF)
Self-Refresh (SELF)
Mode register set (MRS)
ih
ih
, L=V
, L=V
il
il
x= V
x= V
ih
ih
or V
or V
il
il
, V = Valid Data.
, V = Valid Data.
n – 1
CKE
H
H
H
H
H
H
H
H
H
H
H
H
H
n
×
×
×
×
×
×
×
×
×
×
L
×
CS
H
L
L
L
L
L
L
L
L
L
L
L
L
CKE
n-1
H
H
H
H
H
H
RAS
H
H
H
H
H
H
×
L
L
L
L
L
L
n
×
×
×
×
×
×
CAS
H
H
H
H
H
×
L
L
L
L
L
L
L
WE
H
H
H
H
H
H
×
L
L
L
L
L
L
DQM
U
L
H
L
×
H
×
BA1
V
V
V
V
V
V
×
×
×
×
×
×
L
BA0
L
L
H
×
L
×
H
V
V
V
V
V
×
×
×
×
×
×
L
V
A10
H
H
H
×
×
×
V
×
×
L
L
L
L
A9 - A0
V
V
V
V
V
V
A11
×
×
×
×
×
×
×
7

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