M25PE80-VMP6TG NUMONYX, M25PE80-VMP6TG Datasheet - Page 22

• Manufacturer Part Number: M25PE80-VMP6TG
• Description: IC FLASH 8MBIT 75MHZ 8VFQFPN
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25PE80-VMP6TG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 8M (1M x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-VFQFN, 8-VFQFPN
• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 8ns
• Interface Type: Serial (SPI)
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VFQFPN
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1M
• Supply Current: 8mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25PE80-VMP6TG; M25PE80-VMP6TGTR

Instructions
6.2
22/66
Figure 7.
Write disable (WRDI)
The write disable (WRDI) instruction
The write disable (WRDI) instruction is entered by driving Chip Select (S) Low, sending the
instruction code, and then driving Chip Select (S) High.
The write enable latch (WEL) bit is reset under the following conditions:
Figure 8.
Power-up
Write disable (WRDI) instruction completion
Page write (PW) instruction completion
Page program (PP) instruction completion
Write to lock register (WRLR) instruction completion
Page erase (PE) instruction completion
Sector erase (SE) instruction completion
Bulk erase (BE) instruction completion.
Write enable (WREN) instruction sequence
Write disable (WRDI) instruction sequence
S
C
D
Q
S
C
D
Q
High Impedance
High Impedance
0
0
(Figure
1
1
2
2
Instruction
Instruction
8) resets the write enable latch (WEL) bit.
3
3
4
4
5
5
6
6
7
7
AI03750D
AI02281E
M25PE80