NAND01GR3B2CZA6E NUMONYX, NAND01GR3B2CZA6E Datasheet - Page 48

no-image

NAND01GR3B2CZA6E

Manufacturer Part Number
NAND01GR3B2CZA6E
Description
IC FLASH 1GBIT 63VFBGA
Manufacturer
NUMONYX
Datasheet

Specifications of NAND01GR3B2CZA6E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
63-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND01GR3B2CZA6E
Manufacturer:
ST
Quantity:
104
Part Number:
NAND01GR3B2CZA6E
Manufacturer:
Numonyx
Quantity:
70
Part Number:
NAND01GR3B2CZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
NAND01GR3B2CZA6E
0
Company:
Part Number:
NAND01GR3B2CZA6E
Quantity:
23 000
DC and AC parameters
Figure 21. Data Input Latch AC waveforms
1. Data in last is 2112 in x8 devices and 1056 in x16 devices.
Figure 22. Sequential data output after read AC waveforms
1. CL = Low, AL = Low, W = High.
48/61
I/O
CL
AL
W
E
RB
I/O
E
R
(ALSetup time)
tALLWH
tBHRL
(R Accesstime)
tWLWH
tRLQV
(Data Setup time)
tDVWH
(Read Cycle time)
Data Out
tRHRL
(R High Holdtime)
tWLWL
Data In 0
tRLRL
tRLQV
(Data Hold time)
tDVWH
tWHDX
tWLWH
tRHQZ
Data Out
Data In 1
tDVWH
tWHDX
Data In
NAND01G-B2B, NAND02G-B2C
Last
tEHQZ
Data Out
tRLQV
tWLWH
tWHDX
(E Hold time)
tWHEH
tRHQZ
(CL Hold time)
tWHCLH
ai13107
ai08031

Related parts for NAND01GR3B2CZA6E