CAT28F010G12 ON Semiconductor, CAT28F010G12 Datasheet - Page 4

• Manufacturer Part Number: CAT28F010G12
• Description: IC FLASH 1MBIT 120NS 32PLCC
• Manufacturer: ON Semiconductor

Specifications of CAT28F010G12

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 1M (128K x 8)
• Speed: 120ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-PLCC
• Density: 1Mb
• Access Time (max): 120ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 17b
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: 0C to 70C
• Package Type: PLCC
• Program/erase Volt (typ): 11.4 to 12.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8b
• Number Of Words: 128K
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 32
• Data Bus Width: 8 bit
• Architecture: Non Sectored
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Maximum Operating Current: 30 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: CAT28F010G-12; CAT28F010G-12

CAT28F010
D.C. OPERATING CHARACTERISTICS
V
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
Doc. No. MD-1019, Rev. G
CC
Symbol
I
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
V
V
V
V
I
V
LI
LO
SB1
SB2
CC1
CC2
CC3
CC4
PPS
PP1
PP2
PP3
PP4
ID
= +5V 10%, unless otherwise specified.
IL
ILC
OL
IH
IHC
OH1
OH2
ID
LO
(1)
(1)
(1)
(1)
(1)
(1)
(1)
Input Leakage Current
Output Leakage Current
V
V
V
V
V
V
V
V
V
V
V
Input Low Level TTL
Input Low Level CMOS
Output Low Level
Input High Level TTL
Input High Level CMOS
Output High Level TTL
Output High Level CMOS
A
A
V
CC
CC
CC
CC
CC
CC
PP
PP
PP
PP
PP
9
9
CC
Signature Voltage
Signature Current
Standby Current
Read Current
Programming Current
Erase Current
Prog./Erase Verify Current
Standby Current CMOS
Standby Current TTL
Active Read Current
Programming Current
Erase Current
Prog./Erase Verify Current
Erase/Prog. Lockout Voltage
Parameter
V
V
Min.
CC
CC
–0.5
–0.5
11.4
2.4
2.5
2
–0.4
*0.7
4
Limits
V
V
CC
CC
Max.
0.45
100
200
200
0.8
0.8
30
15
15
15
30
30
13
5
1
10
+0.5
+0.5
1
1
Unit
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
A
A
A
A
A
A
Characteristics subject to change without notice
V
V
V
V
CE = V
V
CE = V
V
I
V
Programming in Progress
V
Erasure in Progress
V
Erase Verify in Progress
V
V
V
Programming in Progress
V
Erasure in Progress
V
Erase Verify in Progress
I
I
I
A
A
OUT
OL
OH
OH
IN
CC
OUT
CC
CC
CC
CC
CC
CC
PP
PP
PP
PP
PP
9
9
= V
= V
= 5.8mA, V
Test Conditions
= V
= –2.5mA, V
= –400 A, V
= V
= V
= V
= V
= V
= 5.5V, OE = V
= 5.5V, OE = V
= 5.5V
= 5.5V, CE = V
= 5.5V,
= 5.5V,
= 5.5V, Program or
= 0mA, f = 6 MHz
= V
© 2009 SCILLC. All rights reserved.
ID
ID
CC
CC
IH
PPL
PPH
PPH
PPH
PPH
, V
CC
or V
,
,
, Program or
0.5V,
CC
or V
SS
= 5.5V
CC
CC
CC
SS
= 4.5V
,
= 4.5V
= 4.5V
IH
IH
IL
,