AT45DB161D-SU Atmel, AT45DB161D-SU Datasheet - Page 42

• Manufacturer Part Number: AT45DB161D-SU
• Description: IC FLASH 16MBIT 66MHZ 8SOIC
• Manufacturer: Atmel

Specifications of AT45DB161D-SU

• Format - Memory: FLASH
• Memory Type: DataFLASH
• Memory Size: 16M (4096 pages x 528 bytes)
• Speed: 66MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Architecture: Sectored
• Interface Type: SPI
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 15 mA
• Mounting Style: SMD/SMT
• Organization: 128 KB x 16
• Current, Input, Leakage: 1 μA
• Current, Operating: 11 mA (Read), 12 mA (Program/Erase)
• Current, Output, Leakage: 1
• Data Retention: 20 yrs.
• Density: 16M
• Package Type: EIAJ SOIC
• Temperature, Operating: -40 to +85 °C
• Time, Access: 6 ns
• Time, Address Hold: 5
• Time, Address Setup: 5
• Time, Fall: 6.8 ns
• Time, Rise: 6.8 ns
• Voltage, Input, High: 1.89 to 2.52 V
• Voltage, Input, Low: 0.81 to 1.08 V
• Voltage, Output, High: 2.5 V
• Voltage, Output, Low: 0.4 V
• Voltage, Supply: 2.7 to 3.6 V
• Memory Configuration: 4096 Pages X 528 Bytes
• Clock Frequency: 66MHz
• Supply Voltage Range: 2.5V To 3.6V, 2.7V To 3.6V
• Rohs Compliant: Yes
• Access Time (max): 6ns
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Auto Page Rewrite Flowchart
Figure 25-1. Algorithm for Programming or Reprogramming of the Entire Array Sequentially
Notes:
Atmel AT45DB161D
MAIN MEMORY PAGE PROGRAM
1. This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array
2. A page can be written using either a Main Memory Page Program operation or a Buffer Write operation followed by
3. The algorithm above shows the programming of a single page. The algorithm will be repeated sequentially for each
page-by-page
a Buffer to Main Memory Page Program operation
page within the entire array
THROUGH BUFFER
(82H, 85H)
START
END
provide address
and data
MEMORY PAGE PROGRAM
BUFFER TO MAIN
BUFFER WRITE
(84H, 87H)
(83H, 86H)
3500N–DFLASH–05/10