AT45DB021D-SH-B Atmel, AT45DB021D-SH-B Datasheet - Page 41

IC FLASH 2MBIT 66MHZ 8SOIC

AT45DB021D-SH-B

Manufacturer Part Number
AT45DB021D-SH-B
Description
IC FLASH 2MBIT 66MHZ 8SOIC
Manufacturer
Atmel
Datasheets

Specifications of AT45DB021D-SH-B

Format - Memory
FLASH
Memory Type
DataFLASH
Memory Size
2M (1024 pages x 264 bytes)
Speed
66MHz
Interface
SPI, RapidS
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
Architecture
Sectored
Interface Type
SPI Serial
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
15 mA
Mounting Style
SMD/SMT
Organization
32 KB x 8
Memory Configuration
1024 Pages X 264 Bytes
Clock Frequency
66MHz
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
SOIC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
AT45DB021D-SU
AT45DB021D-SU

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT45DB021D-SH-B
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
3638J–DFLASH–5/10
20.
Figure 19-11. Manufacturer and Device Read (Opcode 9FH)
Auto Page Rewrite Flowchart
Figure 20-1. Algorithm for Programming or Reprogramming of the Entire Array Sequentially
Notes:
SCK
SO
CS
SI
MAIN MEMORY PAGE PROGRAM
Note: Each transition
1. This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array
2. A page can be written using either a Main Memory Page Program operation or a Buffer Write operation followed by
3. The algorithm above shows the programming of a single page. The algorithm will be repeated sequentially for each
page-by-page
a Buffer to Main Memory Page Program operation
page within the entire array
THROUGH BUFFER
HIGH-IMPEDANCE
0
OPCODE
(82H)
9FH
6
7
shown for SI and SO represents one byte (8 bits)
8
1FH
14
15
DEVICE ID BYTE 1
16
START
END
provide address
22
and data
23
MEMORY PAGE PROGRAM
DEVICE ID BYTE 2
24
BUFFER TO MAIN
BUFFER WRITE
30
(84H)
(83H)
31
32
00H
Atmel AT45DB021D
38
41

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