MT46H8M16LFCF-10 IT TR Micron Technology Inc, MT46H8M16LFCF-10 IT TR Datasheet - Page 28

• Manufacturer Part Number: MT46H8M16LFCF-10 IT TR
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H8M16LFCF-10 IT TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 16:
PDF: 09005aef8199c1ec/Source: 09005aef81a19319
MT46H8M16LF_1.fm - Rev. K 7/07 EN
READ-to-PRECHARGE
Notes:
COMMAND
COMMAND
1. D
2. BL = 4 or an interrupted burst of 8.
3. Shown with nominal
4. READ-to-PRECHARGE equals 2 clocks, which allows 2 data pairs of data-out.
5. A READ command with auto precharge enabled, provided
6. PRE = PRECHARGE command; ACT = ACTIVE command.
ADDRESS
ADDRESS
precharge to be performed at x number of clock cycles after the READ command, where x =
BL / 2.
OUT
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
5
5
n = data-out from column n.
Bank a,
Bank a,
READ
Col n
READ
Col n
T0
T0
t
CL = 2
AC,
NOP
NOP
T1
t
T1
DQSCK, and
CL = 3
28
T1n
T1n
128Mb: 8 Meg x 16 Mobile DDR SDRAM
(a or all)
(a or all)
D
Bank a,
Bank a,
OUT
n
T2
T2
PRE
PRE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
DQSQ.
D
n + 1
T2n
T2n
OUT
D
OUT
n
D
T3
NOP
T3
NOP
n + 2
OUT
DON’T CARE
t
t
RP
RP
D
n + 1
T3n
OUT
T3n
D
n + 3
t
OUT
RAS (MIN) is met, would cause a
D
n + 2
©2004 Micron Technology, Inc. All rights reserved.
T4
NOP
T4
OUT
NOP
TRANSITIONING DATA
D
n + 3
OUT
Bank a,
Operations
Bank a,
T5
T5
Row
ACT
Row
ACT