MT46V16M16P-75:F Micron Technology Inc, MT46V16M16P-75:F Datasheet - Page 19
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MT46V16M16P-75:F
Manufacturer Part Number
MT46V16M16P-75:F
Description
IC DDR SDRAM 256MBIT 66TSOP
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46V16M16CY-5BK_TR.pdf
(93 pages)
Specifications of MT46V16M16P-75:F
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (16Mx16)
Speed
7.5ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
750ps
Maximum Clock Rate
266MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
185mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 8:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
256Mb_DDR_x4x8x16_D2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
Parameter/Condition
Operating one-bank precharge current:
t
cycle; Address and control inputs changing once every two clock cycles
Operating one-bank active-read-precharge current: Burst = 4;
t
inputs changing once per clock cycle
Precharge power-down standby current: All banks idle; Power-
down mode;
Idle standby current: CS# = HIGH; All banks are idle;
CKE = HIGH; Address and other control inputs changing once per clock
cycle; V
Active power-down standby current: One bank active; Power-
down mode;
Active standby current: CS# = HIGH; CKE = HIGH; One bank active;
t
twice per clock cycle; Address and other control inputs changing once
per clock cycle
Operating burst read current: Burst = 2;
One bank active; Address and control inputs changing once per clock
cycle;
Operating burst write current: Burst = 2; Continuous burst writes;
One bank active; Address and control inputs changing once per clock
cycle;
clock cycle
Auto refresh burst current:
Self refresh current: CKE ≤ 0.2V
Operating bank interleave read current: Four-bank interleaving
READs (burst = 4) with auto precharge;
t
ACTIVE, READ, or WRITE commands
CK =
RC =
RC =
CK =
t
t
t
t
t
t
RC (MIN);
RAS (MAX);
CK (MIN); DQ, DM, and DQS inputs changing once per clock
CK (MIN); Address and control inputs change only during
CK =
CK =
IN
= V
t
t
CK (MIN);
CK (MIN); DQ, DM, and DQS inputs changing twice per
REF
t
t
I
V
0°C ≤ T
CK =
CK =
DD
DD
for DQ, DQS, and DM
t
CK =
Q = +2.6V ±0.1V, V
Specifications and Conditions (x4, x8, x16: -5B, -6, -6T) - Die Revision K Only
t
t
t
CK =
CK (MIN); CKE = LOW
CK (MIN); CKE = LOW
A
≤ +70°C; Notes: 1–5, 11, 13, 15, 47; Notes appear on pages 35–40; See also Table 9 on page 18
t
I
CK (MIN); I
OUT
t
CK (MIN); DQ, DM, and DQS inputs changing
= 0mA
OUT
DD
= 0mA; Address and control
= +2.6V ±0.1V (-5B); V
t
RC = minimum
t
RC =
Continuous burst reads;
t
RC (MIN);
t
t
t
Standard
Low power (L)
REFC =
REFC = 7.8µs
REFC = 1.95µs (AT)
t
CK =
t
RC allowed;
t
19
t
RFC (MIN)
CK (MIN);
DD
Q = +2.5V ±0.2V, V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol
I
I
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
I
I
DD
I
I
I
DD
DD
DD
DD
DD
DD
DD
DD
4W
3N
5A
5A
6A
4R
2P
2F
3P
0
1
5
6
7
256Mb: x4, x8, x16 DDR SDRAM
DD
Electrical Specifications – I
= +2.5V ±0.2V (-6, -6T);
-5B
100
120
180
180
160
290
50
35
60
4
6
9
4
2
©2003 Micron Technology, Inc. All rights reserved.
-6/6T
115
160
160
160
270
90
50
30
55
4
6
9
4
2
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
23, 48
23, 48
24, 33
24, 33
23, 48
28, 50
28, 50
23, 49
51
23
23
50
12
12
DD