MT46V16M16P-75:F Micron Technology Inc, MT46V16M16P-75:F Datasheet - Page 77
![IC DDR SDRAM 256MBIT 66TSOP](/photos/7/22/72288/mfg557-66-tsop_sml.jpg)
MT46V16M16P-75:F
Manufacturer Part Number
MT46V16M16P-75:F
Description
IC DDR SDRAM 256MBIT 66TSOP
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46V16M16CY-5BK_TR.pdf
(93 pages)
Specifications of MT46V16M16P-75:F
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (16Mx16)
Speed
7.5ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
750ps
Maximum Clock Rate
266MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
185mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 39:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
t DQSS (NOM)
Command
Consecutive WRITE-to-WRITE
Address
DQS
CK#
DM
Notes:
DQ
CK
WRITE
Bank,
1. DI b (or n) = data-in from column b (or column n).
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. Three subsequent elements of data-in are applied in the programmed order following DI n.
4. An uninterrupted burst of 4 is shown.
5. Each WRITE command may be to any bank.
Col b
T0
t DQSS
NOP
DI
T1
b
T1n
WRITE
Bank,
Col n
T2
75
T2n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
T3
DI
n
T3n
Transitioning Data
256Mb: x4, x8, x16 DDR SDRAM
NOP
T4
T4n
©2003 Micron Technology, Inc. All rights reserved.
T5
NOP
Don’t Care
Operations