MT46V16M16P-75:F Micron Technology Inc, MT46V16M16P-75:F Datasheet - Page 2
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MT46V16M16P-75:F
Manufacturer Part Number
MT46V16M16P-75:F
Description
IC DDR SDRAM 256MBIT 66TSOP
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46V16M16CY-5BK_TR.pdf
(93 pages)
Specifications of MT46V16M16P-75:F
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (16Mx16)
Speed
7.5ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
750ps
Maximum Clock Rate
266MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
185mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 1:
Table 2:
Table 3:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
256Mb_DDR_x4x8x16_D1.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
Parameter
Configuration
Refresh count
Row address
Bank address
Column address
Speed Grade
Marking
-75E/-75Z
-75E
-75Z
-5B
-75
-6T
-5B
-75
-6
6T
-6
1
Key Timing Parameters
CL = CAS (READ) latency; MIN clock rate with 50% duty cycle at CL = 2 (-75E, -75Z), CL = 2.5 (-6, -6T, -75), and
CL = 3 (-5B)
Addressing
Speed Grade Compatibility
PC3200 (3-3-3) PC2700 (2.5-3-3) PC2100 (2-2-2) PC2100 (2-3-3) PC2100 (2.5-3-3) PC1600(2-2-2)
Notes:
CL = 2
Yes
-5B
133
133
133
133
100
–
–
–
–
–
1. The -5B device is backward compatible with all slower speed grades. The voltage range of
-5B device operating at slower speed grades is V
Clock Rate (MHz)
CL = 2.5
-6/-6T
167
167
167
133
133
Yes
Yes
Yes
16 Meg x 4 x 4 banks
–
–
–
2K (A0–A9, A11)
8K (A0–A12)
4 (BA0, BA1)
64 Meg x 4
8K
CL = 3
200
n/a
n/a
n/a
n/a
-75E
Yes
Yes
Yes
Yes
–
–
2
Data-Out Window Access Window DQS–DQ Skew
8 Meg x 8 x 4 banks
Micron Technology, Inc., reserves the right to change products or specifications without notice.
8K (A0–A12)
4 (BA0, BA1)
32 Meg x 8
1K (A0–A9)
1.6ns
2.1ns
2.0ns
2.5ns
2.5ns
-75Z
Yes
Yes
Yes
Yes
Yes
–
8K
256Mb: x4, x8, x16 DDR SDRAM
DD
= V
DD
Q = 2.5V ± 0.2V.
±0.70ns
±0.70ns
±0.70ns
±0.75ns
±0.75ns
Yes
Yes
Yes
Yes
Yes
Yes
-75
©2003 Micron Technology, Inc. All rights reserved.
4 Meg x 16 x 4 banks
16 Meg x 16
8K (A0–A12)
4 (BA0, BA1)
512 (A0–A8)
8K
+0.40ns
+0.40ns
+0.50ns
Features
+0.45ns
+0.50ns
Yes
Yes
Yes
Yes
Yes
Yes
-75