CY7C1471V33-117AXC Cypress Semiconductor Corp, CY7C1471V33-117AXC Datasheet

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CY7C1471V33-117AXC

Manufacturer Part Number
CY7C1471V33-117AXC
Description
IC SRAM 72MBIT 117MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1471V33-117AXC

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
72M (2M x 36)
Speed
117MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1471V33-117AXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Cypress Semiconductor Corporation
Document #: 38-05288 Rev. *I
Features
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Note:
• No Bus Latency™ (NoBL™) architecture eliminates
• Can support up to 133-MHz bus operations with zero
• Data is transferred on every clock
• Pin compatible and functionally equivalent to ZBT™
• Internally self-timed output buffer control to eliminate
• Registered inputs for flow-through operation
• Byte Write capability
• 3.3V/2.5V I/O supply (V
• Fast clock-to-output times
• Clock Enable (CEN) pin to enable clock and suspend
• Synchronous self-timed writes
• Asynchronous Output Enable
• CY7C1471V33, CY7C1473V33 available in
• Three chip enables for simple depth expansion
• Automatic Power-down feature available using ZZ
• IEEE 1149.1 JTAG Boundary Scan compatible
• Burst Capability—linear or interleaved burst order
• Low standby power
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
dead cycles between write and read cycles
wait states
devices
the need to use OE
— 6.5 ns (for 133-MHz device)
operation
JEDEC-standard lead-free 100-pin TQFP, lead-free and
non-lead-free 165-ball FBGA package. CY7C1475V33
available in lead-free and non-lead-free 209 ball FBGA
package
mode or CE deselect
DDQ
)
Flow-Through SRAM with NoBL™ Architecture
198 Champion Court
72-Mbit (2M x 36/4M x 18/1M x 72)
Functional Description
The CY7C1471V33, CY7C1473V33 and CY7C1475V33 are
3.3V, 2M x 36/4M x 18/1M x 72 Synchronous Flow-through
Burst SRAMs designed specifically to support unlimited true
back-to-back Read/Write operations without the insertion of
wait
CY7C1475V33 are equipped with the advanced No Bus
Latency (NoBL) logic required to enable consecutive
Read/Write operations with data being transferred on every
clock cycle. This feature dramatically improves the throughput
of data through the SRAM, especially in systems that require
frequent Write-Read transitions.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. The clock input is qualified by
the Clock Enable (CEN) signal, which when deasserted
suspends operation and extends the previous clock
cycle.Maximum access delay from the clock rise is 6.5 ns
(133-MHz device).
Write operations are controlled by the two or four Byte Write
Select (BW
conducted with on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tri-stated
during the data portion of a write sequence.
133 MHz
335
150
6.5
states.
San Jose
X
) and a Write Enable (WE) input. All writes are
The
,
CY7C1471V33,
CA 95134-1709
117 MHz
305
150
8.5
[1]
Revised June 20, 2006
CY7C1471V33
CY7C1473V33
CY7C1475V33
1
CY7C1473V33
, CE
2
, CE
408-943-2600
Unit
mA
mA
ns
3
) and an
and

Related parts for CY7C1471V33-117AXC

CY7C1471V33-117AXC Summary of contents

Page 1

... For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com. Cypress Semiconductor Corporation Document #: 38-05288 Rev. *I 72-Mbit (2M x 36/4M x 18/1M x 72) Functional Description The CY7C1471V33, CY7C1473V33 and CY7C1475V33 are 3.3V 36/4M x 18/ Synchronous Flow-through Burst SRAMs designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states ...

Page 2

... Logic Block Diagram – CY7C1471V33 (2M x 36) ADDRESS A0, A1, A REGISTER MODE CE CLK C CEN ADV/ READ LOGIC CE1 CE2 CE3 ZZ CONTROL Logic Block Diagram – CY7C1473V33 (4M x 18) ADDRESS A0, A1, A REGISTER MODE CE CLK C CEN ADV/ CE1 CE2 CE3 SLEEP ZZ CONTROL Document #: 38-05288 Rev A1' ...

Page 3

... A0, A1, A REGISTER 0 MODE CLK C CEN WRITE ADDRESS REGISTER 1 ADV/ READ LOGIC CE1 CE2 CE3 Sleep ZZ Control Document #: 38-05288 Rev A1 A0' BURST D0 Q0 LOGIC ADV/LD C WRITE ADDRESS REGISTER 2 WRITE REGISTRY AND DATA COHERENCY WRITE CONTROL LOGIC DRIVERS CY7C1471V33 CY7C1473V33 CY7C1475V33 MEMORY ARRAY ...

Page 4

... Pin Configurations DQP DDQ BYTE DDQ DDQ BYTE DDQ DQP 30 D Document #: 38-05288 Rev. *I 100-pin TQFP Pinout CY7C1471V33 CY7C1471V33 CY7C1473V33 CY7C1475V33 80 DQP DDQ BYTE DDQ DDQ BYTE DDQ DQP A Page ...

Page 5

... Pin Configurations (continued DDQ DDQ BYTE DDQ DQP DDQ Document #: 38-05288 Rev. *I 100-pin TQFP Pinout CY7C1473V33 CY7C1471V33 CY7C1473V33 CY7C1475V33 DDQ DQP DDQ BYTE DDQ DDQ Page ...

Page 6

... DDQ DDQ N DQP DDQ P NC/144M MODE NC/576M NC/1G A CE2 DDQ DDQ DDQ DDQ DDQ DDQ DDQ DDQ DDQ N DQP DDQ P NC/144M MODE A A Document #: 38-05288 Rev. *I 165-ball FBGA ( 1.4 mm) Pinout CY7C1471V33 ( CEN CLK TDI A1 TDO TCK TMS CY7C1473V33 (4M x 18) ...

Page 7

... DDQ DD DD DDQ DDQ DDQ DDQ DDQ MODE TDI CY7C1471V33 CY7C1473V33 CY7C1475V33 DQb DQb 3 BWS BWS DQb DQb b f BWS BWS DQb DQb DQb DQb DQPf DQPb DDQ DDQ V DQf V DQf DQf DQf DDQ DDQ V V DQf SS SS DQf V V DDQ ...

Page 8

... CE to select/deselect the device and CE to select/deselect the device and CE to select/deselect the device and DQP s is controlled CY7C1471V33 CY7C1473V33 CY7C1475V33 are placed in a tri-state condition.The correspondingly left floating selects DD through a pull up DD Page ...

Page 9

... When the SRAM is deselected at clock rise by one of the chip enable signals, its output will be tri-stated immediately. Burst Read Accesses The CY7C1471V33, CY7C1473V33 and CY7C1475V33 have an on-chip burst counter that allows the user the ability to Document #: 38-05288 Rev. *I Description . This pin is not available on TQFP packages. ...

Page 10

... Burst Write Accesses The CY7C1471V33, CY7C1473V33, and CY7C1475V33 have an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four Write opera- tions without reasserting the address inputs. ADV/LD must be driven LOW in order to load the initial address, as described in the Single Write Access section above ...

Page 11

... Write Cycle (Continue Burst) Next NOP/Write Abort (Begin Burst) None Write Abort (Continue Burst) Next Ignore Clock Edge (Stall) Current Sleep Mode None [ Truth Table for Read/Write Function (CY7C1471V33) Read Write No bytes written Write Byte A – (DQ and DQP ) A A Write Byte B – (DQ and DQP ) B B Write Byte C – ...

Page 12

... IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1471V33, CY7C1473V33, and CY7C1475V33 incorporate a serial boundary scan test access port (TAP). This port operates in accordance with IEEE Standard 1149.1-1990 but does not have the set of functions required for full 1149.1 compliance. These functions from the IEEE specification are excluded because their inclusion places an added delay in the critical speed path of the SRAM ...

Page 13

... TAP controller’s capture set-up plus hold time (t plus portion of The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is an issue still CY7C1471V33 CY7C1473V33 CY7C1475V33 Unlike the SAMPLE/PRELOAD Page ...

Page 14

... Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions CYC TL t TMSS t TMSH t TDIS t TDIH DON’T CARE UNDEFINED [10, 11] Over the Operating Range Description / ns CY7C1471V33 CY7C1473V33 CY7C1475V33 TDOV t TDOX Min. Max Page Unit ...

Page 15

... DDQ GND < V < DDQ CY7C1473V33 CY7C1475V33 (2Mx36) (4Mx18) (1Mx72) 000 000 000 01011 01011 01011 001001 001001 001001 100100 010100 110100 00000110100 00000110100 CY7C1471V33 CY7C1473V33 CY7C1475V33 to 2.5V SS 1.25V 50Ω 50Ω 20pF O Min. Max. Unit 2.4 V 2.0 V 2.9 V 2.1 V 0.4 V 0.4 V 0.2 V ...

Page 16

... Do Not Use: This instruction is reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operations. Document #: 38-05288 Rev. *I Bit Size (x36) Bit Size (x18 Description CY7C1471V33 CY7C1473V33 CY7C1475V33 Bit Size (x72 110 Page ...

Page 17

... L10 59 B8 K11 60 A7 165-Ball ID Bit # 165-Ball L10 P6 28 K10 R6 29 J10 R8 30 H11 P3 31 G11 P4 32 F11 P8 33 E11 P9 34 D11 P10 35 C11 R9 36 A11 R10 37 A9 R11 38 B9 M10 39 A10 CY7C1471V33 CY7C1473V33 CY7C1475V33 Bit # 165-Ball Bit # 165-Ball ID 40 B10 ...

Page 18

... J11 V5 72 J10 U5 73 H11 U6 74 H10 W7 75 G11 V7 76 G10 U7 77 F11 V8 78 F10 V9 79 E10 W11 80 E11 W10 81 D11 V11 82 D10 V10 83 C11 U11 84 C10 CY7C1471V33 CY7C1473V33 CY7C1475V33 Bit # 209-Ball ID 85 B11 86 B10 87 A11 88 A10 100 B3 101 C3 102 C4 103 ...

Page 19

... V – inputs static /2), undershoot: V (AC) > –2V (Pulse width less than t CYC IL (min.) within 200 ms. During this time V < CY7C1471V33 CY7C1473V33 CY7C1475V33 Ambient Temperature 0°C to +70°C 3.3V –5%/+10% 2.5V – –40°C to +85°C Min. Max. 3.135 3.6 3.135 ...

Page 20

... EIA/JESD51 317Ω 3.3V V OUTPUT GND 351Ω INCLUDING JIG AND (b) SCOPE R = 1667Ω 2.5V V DDQ OUTPUT GND 1538Ω INCLUDING JIG AND (b) SCOPE CY7C1471V33 CY7C1473V33 CY7C1475V33 165 FBGA 209 BGA Package Package 100 TQFP 165 FBGA 209 FBGA Max ...

Page 21

... V is less than t and t is less than t to eliminate bus contention between SRAMs when sharing the same OELZ CHZ CLZ = 2.5V. DDQ CY7C1471V33 CY7C1473V33 CY7C1475V33 133 MHz 117 MHz Max. Min. Max ...

Page 22

... CLZ D(A2) D(A2+1) Q(A3) Q(A4) t OEHZ BURST READ READ BURST WRITE Q(A3) Q(A4) READ D(A2+1) Q(A4+1) DON’T CARE UNDEFINED is LOW. When CE is HIGH HIGH CY7C1471V33 CY7C1473V33 CY7C1475V33 OEV t CHZ Q(A4+1) D(A5) Q(A6) D(A7) t DOH t OELZ WRITE READ WRITE DESELECT D(A5) ...

Page 23

... CDV t DOH t CLZ D(A2) D(A2+1) Q(A3) Q(A4) t OEHZ BURST READ READ BURST WRITE Q(A3) Q(A4) READ D(A2+1) Q(A4+1) DON’T CARE UNDEFINED CY7C1471V33 CY7C1473V33 CY7C1475V33 OEV t CHZ Q(A4+1) D(A5) Q(A6) D(A7) t DOH t OELZ WRITE READ WRITE DESELECT D(A5) Q(A6) D(A7) Page ...

Page 24

... Device must be deselected when entering ZZ mode. See Truth Table for all possible signal conditions to deselect the device. 28. DQs are in high-Z when exiting ZZ sleep mode. Document #: 38-05288 Rev DDZZ High-Z DON’T CARE CY7C1471V33 CY7C1473V33 CY7C1475V33 t ZZREC t RZZI DESELECT or READ Only Page ...

Page 25

... Fine-Pitch Ball Grid Array ( 1.4 mm) Lead-Free CY7C1473V33-133BZXI CY7C1475V33-133BGI 51-85167 209-ball Fine-Pitch Ball Grid Array (14 × 22 × 1.76 mm) CY7C1475V33-133BGXI 117 CY7C1471V33-117AXC 51-85050 100-Pin Thin Quad Flat Pack ( 1.4 mm) Lead-Free CY7C1473V33-117AXC CY7C1471V33-117BZC 51-85165 165-ball Fine-Pitch Ball Grid Array ( 1.4 mm) CY7C1473V33-117BZC CY7C1471V33-117BZXC 51-85165 165-ball Fine-Pitch Ball Grid Array ( 1.4 mm) Lead-Free ...

Page 26

... BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH 0.20 MAX. 3. DIMENSIONS IN MILLIMETERS A CY7C1471V33 CY7C1473V33 CY7C1475V33 1.40±0.05 12°±1° SEE DETAIL (8X) 0 ...

Page 27

... Package Diagrams (continued) TOP VIEW PIN 1 CORNER SEATING PLANE C Document #: 38-05288 Rev. *I 165-ball FBGA ( 1.4 mm) (51-85165 CY7C1471V33 CY7C1473V33 CY7C1475V33 PIN 1 CORNER BOTTOM VIEW Ø0. Ø0. Ø0.45±0.05(165X 1.00 5.00 10.00 B 15.00±0.10 0.15(4X) 51-85165-*A Page ...

Page 28

... The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. 209-ball FBGA ( 1.76 mm) (51-85167) CY7C1471V33 CY7C1473V33 CY7C1475V33 ...

Page 29

... Document History Page Document Title: CY7C1471V33/CY7C1473V33/CY7C1475V33, 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL™ Architecture Document #: 38-05288 REV. ECN NO. Issue Date ** 114675 08/06/02 *A 121521 02/07/03 *B 223721 See ECN *C 235012 See ECN *D 243572 See ECN *E 299511 See ECN *F 320197 See ECN ...

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