M25P20-VMN6 NUMONYX, M25P20-VMN6 Datasheet - Page 33
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M25P20-VMN6
Manufacturer Part Number
M25P20-VMN6
Description
IC FLASH 2MBIT 50MHZ 8SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet
1.M25P20-VMN6T.pdf
(40 pages)
Specifications of M25P20-VMN6
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
2M (256K x 8)
Speed
50MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M25P20-VMN6P
Manufacturer:
ST
Quantity:
15 780
Company:
Part Number:
M25P20-VMN6PB
Manufacturer:
MITSUBISHI
Quantity:
100
Company:
Part Number:
M25P20-VMN6PT
Manufacturer:
ST
Quantity:
2 100
Company:
Part Number:
M25P20-VMN6TP
Manufacturer:
STM
Quantity:
1 865
Note: 1. t
Figure 22. Serial Input Timing
Symbol
t
t
t
t
t
t
HHQX
WHSL
SHWL
t
HLQZ
RES1
RES2
t
CHHL
DP
2. Value guaranteed by characterization, not 100% tested in production.
3. Expressed as a slew-rate.
4. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
5. Details of how to find the date of marking are given in Application Note, AN1995.
2
CH
2
2
2
2
4
4
S
C
D
Q
+ t
CL
must be greater than or equal to 1/ f
tCHSL
Alt.
t
t
HZ
LZ
40MHz available for products marked since week 20 of 2004, only
tDVCH
HOLD Hold Time (relative to C)
HOLD to Output Low-Z
HOLD to Output High-Z
Write Protect Setup Time
Write Protect Hold Time
S High to Deep Power-down Mode
S High to Standby Mode without Electronic
Signature Read
S High to Standby Mode with Electronic
Signature Read
Test conditions specified in
High Impedance
MSB IN
tSLCH
tCHDX
C
Parameter
Table 9.
tCLCH
tCHSH
and
LSB IN
Table 16.
Min.
100
20
5
tCHCL
tSHSL
Typ.
tSHCH
5
AI01447C
Max.
1.8
9
9
3
3
M25P20
Unit
ns
ns
ns
ns
ns
33/40
s
s
s