NAND128W3A0AN6 STMicroelectronics, NAND128W3A0AN6 Datasheet - Page 33

• Manufacturer Part Number: NAND128W3A0AN6
• Description: IC FLASH 128MBIT 48TSOP
• Manufacturer: STMicroelectronics

Specifications of NAND128W3A0AN6

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 128M (16M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC characteristics Tables that follow, are de-
rived from tests performed under the Measure-
Table 16. Operating and AC Measurement Conditions
Table 17. Capacitance
Note: T
Supply Voltage (V
Ambient Temperature (T
Load Capacitance (C
Input Pulses Voltages
Input and Output Timing Ref. Voltages
Input Rise and Fall Times
Symbol
C
C
A
I/O
IN
= 25°C, f = 1 MHz. C
Input Capacitance
Input/Output Capacitance
DD
)
L
) (1 TTL GATE and C
Parameter
A
IN
)
and C
Parameter
I/O
are not 100% tested.
L
)
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
3V devices (2.7 - 3.6V)
3V devices (3.0 - 3.6V)
Test Condition
V
V
1.8V devices
1.8V devices
1.8V devices
1.8V devices
IN
3V devices
3V devices
3V devices
IL
Grade 1
Grade 6
= 0V
= 0V
ment
16., Operating and AC Measurement
Designers should check that the operating condi-
tions in their circuit match the measurement condi-
tions when relying on the quoted parameters.
Conditions
Typ
Min
–40
1.7
2.7
0.4
0
0
NAND Flash
100
0.9
1.5
summarized
30
50
5
Max
10
10
Max
1.95
V
3.6
2.4
70
85
DD
Conditions.
in
Units
Unit
pF
pF
pF
pF
pF
°C
°C
ns
V
V
V
V
V
V
Table
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