NAND128W3A0AN6 STMicroelectronics, NAND128W3A0AN6 Datasheet - Page 52

• Manufacturer Part Number: NAND128W3A0AN6
• Description: IC FLASH 128MBIT 48TSOP
• Manufacturer: STMicroelectronics

Specifications of NAND128W3A0AN6

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 128M (16M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

NAND128-A, NAND256-A, NAND512-A, NAND01G-A
PART NUMBERING
Table 28. Ordering Information Scheme
Example:
NAND512R3A
0
A ZA 1
T
Device Type
NAND = NAND Flash Memory
Density
128 = 128Mb
256 = 256Mb
512 = 512Mb
01G = 1Gb
Operating Voltage
R = V
= 1.7 to 1.95V
DD
W = V
= 2.7 to 3.6V
DD
Bus Width
3 = x8
4 = x16
Family Identifier
A = 528 Bytes/ 264 Word Page
Device Options
0 = No Options
1 = Automatic Page 0 Read at Power-up
2 = Chip Enable Don’t Care Enabled
3 = Chip Enable Don’t Care Enabled and Automatic Page 0 Read at Power-up
Product Version
A = 120nm process technology
(Single Die 128Mb, 256Mb, 512Mb) (Dual Die 512Mb, 1Gb)
Package
N = TSOP48 12 x 20mm (all devices)
V = WSOP48 12 x 17 x 0.65mm (128Mbit, 256Mbit and 512Mbit devices)
ZA = VFBGA55 8 x 10 x 1mm, 6x8 ball array, 0.8mm pitch (128Mbit and 256Mbit devices)
ZB = TFBGA55 8 x 10 x 1.2mm, 6x8 ball array, 0.8mm pitch (512Mbit Dual Die devices)
ZA = VFBGA63 8.5 x 15 x 1mm, 6x8 ball array, 0.8mm pitch (512Mbit devices)
ZB = TFBGA63 8.5 x 15 x 1.2mm, 6x8 ball array, 0.8mm pitch (1Gbit Dual Die devices)
Temperature Range
1 = 0 to 70 °C
6 = –40 to 85 °C
Option
blank = Standard Packing
T = Tape & Reel Packing
E = Lead Free Package, Standard Packing
F = Lead Free Package, Tape & Reel Packing
Devices are shipped from the factory with the memory content bits, in valid blocks, erased to ’1’.
For further information on any aspect of this device, please contact your nearest ST Sales Office.
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