NAND256W3A2BN6F STMicroelectronics, NAND256W3A2BN6F Datasheet - Page 36

IC FLASH 256MBIT 48TSOP

NAND256W3A2BN6F

Manufacturer Part Number
NAND256W3A2BN6F
Description
IC FLASH 256MBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet

Specifications of NAND256W3A2BN6F

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
256M (32M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-

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Program and erase times and endurance cycles
8
36/59
Program and erase times and endurance cycles
The program and erase times and the number of program/ erase cycles per block are shown
in
Table 14.
Page program time
Block erase time
Program/erase cycles (per block)
Data retention
Table
14.
Program, erase times and program erase endurance cycles
Parameters
100,000
Min
10
NAND flash
Typ
200
2
NAND128-A, NAND256-A
Max
500
3
cycles
years
Unit
ms
µs

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