NAND256W3A2BN6F STMicroelectronics, NAND256W3A2BN6F Datasheet - Page 41

• Manufacturer Part Number: NAND256W3A2BN6F
• Description: IC FLASH 256MBIT 48TSOP
• Manufacturer: STMicroelectronics

Specifications of NAND256W3A2BN6F

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 256M (32M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

NAND128-A, NAND256-A
Table 19.
1. If t
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
WHALH
WHCLH
t
ALHWL
CLHWL
WHALL
WHCLL
CLLWL
t
ALLWL
WHWL
DVWH
WHDX
WHEH
WLWH
WLWL
ELWL
ELWL
is less than 10 ns, t
symbol
t
t
t
t
Alt.
t
t
t
t
t
t
t
CLH
ALS
CLS
ALH
WH
WP
WC
DH
CH
DS
CS
AC characteristics for command, address, data input
t
Address Latch Low to Write Enable Low
Address Latch High to Write Enable Low
Command Latch High to Write Enable Low
Command Latch Low to Write Enable Low
Data Valid to Write Enable High
Chip Enable Low to Write Enable Low
Write Enable High to Address Latch High
Write Enable High to Address Latch Low
Write Enable High to Command Latch High
Write Enable High to Command Latch Low
Write Enable High to Data Transition
Write Enable High to Chip Enable High
Write Enable High to Write Enable Low
Write Enable Low to Write Enable High
Write Enable Low to Write Enable Low
WLWH
must be minimum 35 ns, otherwise, t
Parameter
WLWH
AL setup time
CL setup time
Data setup time
E setup time
AL hold time
CL hold time
Data hold time
E hold time
W High hold time
W pulse width
Write cycle time
may be minimum 25 ns.
DC and AC parameters
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
3 V devices
25
20
10
10
10
10
15
50
0
0
0
(1)
41/59
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns